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IPI03N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·
IPFH6N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 12,8 mOhm;	æåºå	è ̄¢ä»·
IPF13N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 12,8 mOhm;	æåºå	è ̄¢ä»·
IPF10N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 10,4 mOhm;	æåºå	è ̄¢ä»·
IPF09N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 8,8 mOhm;	æåºå	è ̄¢ä»·
IPF06N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ Rundsteckverbinder; Körpermaterial: Aluminium; Serie:PT06; Anzahl der Kontakte:61; Größe der Steckerschale: 24; Anschluss: Crimpen; Kreisförmig	æåºå	è ̄¢ä»·
IPF05N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 5,3 mOhm;	æåºå	è ̄¢ä»·
IPF04N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 4,0 mOhm;	æåºå	è ̄¢ä»·
IPDH9N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 9,2 mOhm; RDS (ein) (max.) (	æåºå	è ̄¢ä»·
IPDH6N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 6,0 mOhm; RDS (ein) (max.) (	æåºå	è ̄¢ä»·
IPDH5N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 5,2 mOhm; RDS (ein) (max.) (	æåºå	è ̄¢ä»·
IPDH4N03LA	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 4,2 mOhm; RDS (ein) (max.) (	æåºå	è ̄¢ä»·
IPD78CN10N	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 78,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·
IPD64CN10N	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 64,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·
IPD49CN10N	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 49,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·
IPD33CN10N	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 33,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·
IPD25CNE8N	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 25,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·
IPD25CN10N	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 25,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·
IPD20N03L	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 20,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·
IPD16CNE8N	INFINEON	2010+	åçæ¶ä1/2ç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 16,0 mOhm; RDS (ein) (max.)	æåºå	è ̄¢ä»·