| åå· | åå | æ¹å· | å°è£ | è ̄'æ | 
		
			| 
                                    RFP70N06
                                 | FAIRCHILD | 2010+ | TO-220 | 70 A, 60 V, 0,014 Ohm, N-Kanal-Leistungs-MOSFETs; Gehäuse: TO-220; Anzahl der Pins: 3; Behälter: Schiene | 
		
			| 
                                    RFD16N05LSM
                                 | FAIRCHILD | 2010+ | TO-252 | 16A, 50V, 0.047 Ohm, Logikpegel, N-Kanal Leistungs-MOSFETs (16A, 50V, 0.047 Ω N æ²éåçMOSåºæåºç®¡) | 
		
			| 
                                    RFD14N05LSM9A
                                 | FAIRCHILD | 2010+ | TO-252 | 14 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡) | 
		
			| 
                                    RFD14N05LSM
                                 | FAIRCHILD | 2010+ | TO-252 | 14 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡) | 
		
			| 
                                    RFD14N05L
                                 | FAIRCHILD | 2010+ | TO-251 | 14 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡) | 
		
			| 
                                    NDT451AN
                                 | FAIRCHILD | 2010+ | SOT-223 | N-Channel Enhancement Mode Field Effect Transistorï1/47.2Aï1/430Vï1/40.035Ωï1/4(Næ²éå¢å1/4ºååºæåºç®¡ï1/4æ1/4çμæμ7.2A, æ1/4æºçμå30Vï1/4å ̄1/4éçμé»0.035Ωï1/4) | 
		
			| 
                                    NDS356AP
                                 | FAIRCHILD | 2010+ | SOT-23-3 | P-Kanal Logic Level Enhancement Mode Field Effect Transistorï1/4-1.1Aï1/4-30Vï1/40.3Ωï1/4(Pæ²éé»è3/4å¢å1/4ºåMOSåºæåºç®¡ï1/4æ1/4çμæμ-1.1A, æ1/4æºçμå-30Vï1/4å ̄1/4éçμé»0.3Ωï1/4) | 
		
			| 
                                    NDS355AN
                                 | FAIRCHILD | 2010+ | SOT-23-3 | N-Channel Logic Level Enhancement Mode Field Effect Transistorï1/41.7Aï1/430Vï1/40.125Ωï1/4(Næ²éé»è3/4å¢å1/4ºåMOSåºæåºç¡ï1®/4æ1/4çμæμ1.7A, æ1/4æºçμå30Vï1/4å ̄1/4éçμé» 0.125Ωï1/4) | 
		
			| 
                                    NDS352AP
                                 | FAIRCHILD | 2010+ | SOT-23-3 | P-Kanal Logic Level Enhancement Mode Field Effect Transistorï1/4-0.9Aï1/4-30Vï1/40.5Ωï1/4(Pæ²éé»è3/4å¢å1/4ºåMOSåºæåºç®¡ï1/4æ1/4çμæμ-0.9A, æ1/4æºçμå-30Vï1/4å ̄1/4éçμé»0.5Ωï1/4) | 
		
			| 
                                    FDN5630_NL
                                 | FAIRCHILD | 2010+ | SOT-23 | 60V N-Kanal PowerTrench MOSFET; Paket: SuperSOT; Anzahl der Pins: 3; Behälter: Tape & Reel | 
		
			| 
                                    MTP3055VL
                                 | FAIRCHILD | 2010+ | TO-220 | Næ²éå¢å1/4ºæ ̈¡å1/4çé»è3/4çμå¹³åºæåºæ¶ä1/2管 N-Kanal Logic Level Enhancement Mode Feldeffekttransistor; Gehäuse: TO-220AB; Anzahl der Pins: 3; Behälter: Schiene | 
		
			| 
                                    HUF76407D3ST
                                 | FAIRCHILD | 2010+ | TO-252 | 11 A, 60 V, 0,107 Ohm, N-Kanal, UltraFET-Leistungs-MOSFET mit Logikpegel; Gehäuse: TO-252(DPAK); Anzahl der Pins: 2; Behälter: Tape & Reel | 
		
			| 
                                    HUF75882G3
                                 | FAIRCHILD | 2010+ | TO-220 | 75A, 100V, 0.008 Ohm, N-Kanal UltraFET Leistungs-MOSFET (75A, 100V, 0.008Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡) | 
		
			| 
                                    HUF75653G3
                                 | FAIRCHILD | 2010+ | TO-220 | 75A, 100V, 0.008 Ohm, N-Kanal UltraFET Leistungs-MOSFET (75A, 100V, 0.008Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡) | 
		
			| 
                                    HUF75545P3
                                 | FAIRCHILD | 2010+ | TO-220 | 75A, 80V, 0.010 Ohm, N-Kanal, UltraFET-Leistungs-MOSFET (75A, 80V, 0.010Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡ | 
		
			| 
                                    HUF75339S3ST
                                 | FAIRCHILD | 2010+ | TO-263 | åçåºæåºç®¡ | 
		
			| 
                                    HUF75339S3S
                                 | FAIRCHILD | 2010+ | TO-263 | 75 A, 55 V, 0,012 Ohm, N-Kanal-UltraFET-Leistungs-MOSFETs (75 A, 55 V, 0,012 Ω, Næ²éUltraFETåçMOSåºæåºç®¡) | 
		
			| 
                                    HUF75339P3
                                 | FAIRCHILD | 2010+ | TO-220 | 75 A, 55 V, 0,012 Ohm, N-Kanal-UltraFET-Leistungs-MOSFETs (75 A, 55 V, 0,012 Ω, Næ²éUltraFETåçMOSåºæåºç®¡) | 
		
			| 
                                    HUF75339G3
                                 | FAIRCHILD | 2010+ | TO-247 | 75 A, 55 V, 0,012 Ohm, N-Kanal UltraFET-Leistungs-MOSFETs (75 A, 55 V, 0,012 μm©, Næ²éUltraFETåçMOSåºæåºç®¡ | 
		
			| 
                                    HUF75321P3
                                 | FAIRCHILD | 2010+ | TO-220 | 35 A, 55 V, 0,034 Ohm, N-Kanal UltraFET-Leistungs-MOSFETs (35 A, 55 V, 0,034 î©, næ²éUltraFETåçMOSåºæåºç®¡) |