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NDS355ANN-Channel Logic Level Enhancement Mode Field Effect Transistorï1/41.7Aï1/430Vï1/40.125Ωï1/4(Næ²éé»è3/4å¢å1/4ºåMOSåºæåºç®¡ï1/4æ1/4çμæμ1.7A, æ1/4æºçμå30Vï1/4å ̄1/4éçμé» 0,125Ωï1/4)

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RFD14N05LSM9A FAIRCHILD2010+TO-25214 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡)
RFD14N05LSM FAIRCHILD2010+TO-25214 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡)
RFD14N05L FAIRCHILD2010+TO-25114 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡)
NDT451AN FAIRCHILD2010+SOT-223N-Channel Enhancement Mode Field Effect Transistorï1/47.2Aï1/430Vï1/40.035Ωï1/4(Næ²éå¢å1/4ºååºæåºç®¡ï1/4æ1/4çμæμ7.2A, æ1/4æºçμå30Vï1/4å ̄1/4éçμé»0.035Ωï1/4)
NDS356AP FAIRCHILD2010+SOT-23-3P-Kanal Logic Level Enhancement Mode Field Effect Transistorï1/4-1.1Aï1/4-30Vï1/40.3Ωï1/4(Pæ²éé»è3/4å¢å1/4ºåMOSåºæåºç®¡ï1/4æ1/4çμæμ-1.1A, æ1/4æºçμå-30Vï1/4å ̄1/4éçμé»0.3Ωï1/4)
NDS352AP FAIRCHILD2010+SOT-23-3P-Kanal Logic Level Enhancement Mode Field Effect Transistorï1/4-0.9Aï1/4-30Vï1/40.5Ωï1/4(Pæ²éé»è3/4å¢å1/4ºåMOSåºæåºç®¡ï1/4æ1/4çμæμ-0.9A, æ1/4æºçμå-30Vï1/4å ̄1/4éçμé»0.5Ωï1/4)
FDN5630_NL FAIRCHILD2010+SOT-2360V N-Kanal PowerTrench MOSFET; Paket: SuperSOT; Anzahl der Pins: 3; Behälter: Tape & Reel
MTP3055VL FAIRCHILD2010+TO-220Næ²éå¢å1/4ºæ ̈¡å1/4çé»è3/4çμå¹³åºæåºæ¶ä1/2管 N-Kanal Logic Level Enhancement Mode Feldeffekttransistor; Gehäuse: TO-220AB; Anzahl der Pins: 3; Behälter: Schiene
HUF76407D3ST FAIRCHILD2010+TO-25211 A, 60 V, 0,107 Ohm, N-Kanal, UltraFET-Leistungs-MOSFET mit Logikpegel; Gehäuse: TO-252(DPAK); Anzahl der Pins: 2; Behälter: Tape & Reel
HUF75882G3 FAIRCHILD2010+TO-22075A, 100V, 0.008 Ohm, N-Kanal UltraFET Leistungs-MOSFET (75A, 100V, 0.008Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡)

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JAE. JIT. OCHSE-16 JAE Elektronik2023+è¿æ¥å ̈16#ééå ̈
RCS20M-12RD28 SOURIAU-SONNENBANK2023+è¿æ¥å ̈Zirkuläre MIL-Spezifikationskontakte CONTACT
PW620-41M5kΩ129 FSG24+çμä1/2å ̈PW620-41 M 5k Ω/129°Çμä1/2Å ̈
CU-U-201-GE Mors Smitt24+继çμå ̈继çμå ̈
FRCIR06-32-8P-F80-T108 ITT Interconnect-Lösungen24+è¿æ¥å ̈CIR 30C 24#16 6#12 STECKER
Artikel-Nr.: SPCI-001-500 欧米è24+DIPè£ ̧ççμå¶çº¿ï1/4JN ï1/4线è1/2'ï1/4 | 欧米è éç»ç1/4 T/C 线ï1/4ç»ç'å3/4ï1/4J å ï1/4-ï1/4ï1/4500' çμç1/4ï1/450 AWGï1/40 °C è³ 315 °Cï1/432 °F è³ 600 °Fï1/4ï1/4SPCI ç³»åï1/4线è1/2"
ET-JL06-18 JAE Elektronik2023+å·¥å ·æééå·¥å ·
JL06-28-SONSTIGES JAE Elektronik24+è¿æ¥å ̈27P
LRC-LRF2512LF-01-R005-F TT23+2512Strommesswiderstände - SMD 2 Watt .005 Ohm 1%
ABCIRH06T2214SCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈ABCIRHç³»åè¿æ¥å ̈ç»ä»¶ å ̈æ°åè£ è¿å£ ç°è'§
ABCIRH00T2214PCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈onnector Reverse Bajonett Kupplung Rund RCP 14S-5 ST Kastenhalterung - Bulk
ABB1240KLKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
ABB1240KPKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
RDE7U3A472J4K1H03B Murata Manufacturing Co Ltd24+DIPKondensator: Keramik, 4,7nF, 1kV, U2J, ±5%, THT, 5mm
C195S/24EV-U2 æ²å°ç¹å®24+DIPè1/2 ̈éè¡ä ̧ä ̧ç ̈æ¥è§¦å ̈C195S/24EV-U2 ç°è'§ç¹ä»·åºå2000åª
ABCIRHSE06T16S8SCNF80M32V0 AB Steckverbinder24+è¿æ¥å ̈Zirkulärer MIL Spec Steckverbinder ER 5C 5#16S SKT STECKER
RDE7U3A150J2K1H03B Murata Manufacturing Co Ltd24+çμ容Kondensator: Keramik, 15pF, 1kV, U2J, ±5%, THT, 5mm
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)
Nr. C-1106437 TE Connectivity24+è¿æ¥å ̈Steckverbinder Zubehör Haube Aluminiumdruckguss loses Stück

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NDS352AP FAIRCHILD2010+SOT-23-3P-Kanal Logic Level Enhancement Mode Field Effect Transistorï1/4-0.9Aï1/4-30Vï1/40.5Ωï1/4(Pæ²éé»è3/4å¢å1/4ºåMOSåºæåºç®¡ï1/4æ1/4çμæμ-0.9A, æ1/4æºçμå-30Vï1/4å ̄1/4éçμé»0.5Ωï1/4)
FDN5630_NL FAIRCHILD2010+SOT-2360V N-Kanal PowerTrench MOSFET; Paket: SuperSOT; Anzahl der Pins: 3; Behälter: Tape & Reel
MTP3055VL FAIRCHILD2010+TO-220Næ²éå¢å1/4ºæ ̈¡å1/4çé»è3/4çμå¹³åºæåºæ¶ä1/2管 N-Kanal Logic Level Enhancement Mode Feldeffekttransistor; Gehäuse: TO-220AB; Anzahl der Pins: 3; Behälter: Schiene
HUF76407D3ST FAIRCHILD2010+TO-25211 A, 60 V, 0,107 Ohm, N-Kanal, UltraFET-Leistungs-MOSFET mit Logikpegel; Gehäuse: TO-252(DPAK); Anzahl der Pins: 2; Behälter: Tape & Reel
HUF75882G3 FAIRCHILD2010+TO-22075A, 100V, 0.008 Ohm, N-Kanal UltraFET Leistungs-MOSFET (75A, 100V, 0.008Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡)
HUF75653G3 FAIRCHILD2010+TO-22075A, 100V, 0.008 Ohm, N-Kanal UltraFET Leistungs-MOSFET (75A, 100V, 0.008Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡)
HUF75545P3 FAIRCHILD2010+TO-22075A, 80V, 0.010 Ohm, N-Kanal, UltraFET-Leistungs-MOSFET (75A, 80V, 0.010Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡
HUF75339S3ST FAIRCHILD2010+TO-263åçåºæåºç®¡
HUF75339S3S FAIRCHILD2010+TO-26375 A, 55 V, 0,012 Ohm, N-Kanal-UltraFET-Leistungs-MOSFETs (75 A, 55 V, 0,012 Ω, Næ²éUltraFETåçMOSåºæåºç®¡)
HUF75339P3 FAIRCHILD2010+TO-22075 A, 55 V, 0,012 Ohm, N-Kanal-UltraFET-Leistungs-MOSFETs (75 A, 55 V, 0,012 Ω, Næ²éUltraFETåçMOSåºæåºç®¡)
HUF75339G3 FAIRCHILD2010+TO-24775 A, 55 V, 0,012 Ohm, N-Kanal UltraFET-Leistungs-MOSFETs (75 A, 55 V, 0,012 μm©, Næ²éUltraFETåçMOSåºæåºç®¡
HUF75321P3 FAIRCHILD2010+TO-22035 A, 55 V, 0,034 Ohm, N-Kanal UltraFET-Leistungs-MOSFETs (35 A, 55 V, 0,034 î©, næ²éUltraFETåçMOSåºæåºç®¡)
FQT13N06TF FAIRCHILD2010+SOT-22360V N-Kanal QFET; Gehäuse: SOT-223; Anzahl der Pins: 3; Behälter: Tape & Reel
FQPF7N10 FAIRCHILD2010+TO-220100VçNæ²éMOSFET
FQPF50N06 FAIRCHILD2010+TO-22060VçPééMOSFET
FQP80N06 FAIRCHILD2010+TO-22060VçPééMOSFET
FQP47P06 FAIRCHILD2010+TO-22060VçPééMOSFET
FQP30N06 FAIRCHILD2010+TO-22060VçNæ²éMOSFET
FQP16N25C FAIRCHILD2010+TO-220250VçNæ²éMOSFET
FQH140N10 FAIRCHILD2010+TO-247100VçNæ²éMOSFET

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