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RFD14N05LSM
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RFD14N05LSM

  • 所属类别：场效应管
  • 产品名称：14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
  • 厂商：FAIRCHILD
  • 生产批号：2010+
  • 封装：TO-252
  • 库存状态：有库存
  • 库存量：12000
  • 最低订购量：1
  • 详细资料：点击查找RFD14N05LSM的pdf资料
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  • 产品介绍

RFD14N05LSM    14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)

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SI4435DY VISHAY2010+SOP-830V P-Channel PowerTrench MOSFET; ; No of Pins: 8; Container: Tape & Reel
SFP9540 FAIRCHILD2010+TO-220P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)
RFP70N06 FAIRCHILD2010+TO-22070A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail
RFD16N05LSM FAIRCHILD2010+TO-25216A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管)
RFD14N05LSM9A FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD2010+TO-25114A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD2010+SOT-223N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N沟道增强型场效应管（漏电流7.2A, 漏源电压30V，导通电阻0.035Ω）)
NDS356AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P沟道逻辑增强型MOS场效应管（漏电流-1.1A, 漏源电压-30V，导通电阻0.3Ω）)
NDS355AN FAIRCHILD2010+SOT-23-3N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻0.125Ω）)
NDS352AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P沟道逻辑增强型MOS场效应管（漏电流-0.9A, 漏源电压-30V，导通电阻0.5Ω）)

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