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  • 产åå称ï1/4HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mã , ID = -23A )
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IRF9540NLPBFHEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mã , ID = -23A )

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IRF9540NLPBF IR10+SOT-263HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mã , ID = -23A )

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RDE7U3A150J2K1H03B Murata Manufacturing Co Ltd24+çμ容Kondensator: Keramik, 15pF, 1kV, U2J, ±5%, THT, 5mm
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)
Nr. C-1106437 TE Connectivity24+è¿æ¥å ̈Steckverbinder Zubehör Haube Aluminiumdruckguss loses Stück
KH208-8 Vitrohm24+DIPWiderstand, 100 Milliohm, ï¿1/2 10%, 5 W, axial bedrahtet, drahtgewickelt, Stromversorgung (Alt: KHS500KB-AX-R1AA)
GAP26MDS5T0000 Amphenol Positronic23+DIP©ç å1/2¢ MIL è§æ 1/4è¿æ¥å ̈
EE046-T11 å3/4·å1/2E+E24+æ ̈¡åå·åæ£æμ仪
A309560C7W Amphenol Energy Technologies24+è¿æ¥å ̈309 Stecker,3P+N+E / 5W - 60A - Stecker - 277/480V keway 7h,IP67
HBL430B7W Hubbell Premise Verkabelung24+è¿æ¥å ̈PS, IEC, EINGANG, 3P4W, 30A 3P 480V,4X/69K
621N-18F-10-6S Amphenol Corporation24+è¿æ¥å ̈Rundsteckverbinder Steckverbinder Stecker Größe 10
LV100-4000/SP6 è±å§24+ä1/4 æå ̈çμæμä1/4 æå ̈å3/4·å1/2ååä ̧æè'§æºä1/4å¿ä3/4åºä ̧
D-U307-KLS Mors Smitt24+继çμå ̈Relais - Steckbar, 4-polig, AC-Spule
TDB4-U204-C Mors Smitt24+继çμå ̈延æ¶ç»§μå ̈
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F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP

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IRF9530NLPBF IR10+TO-262Fortschrittliche Prozesstechnologie Oberflächenmontage
IRF9520NLPBF IR10+TO-235-100-V-Einzel-P-Kanal-HEXFET-Leistungs-MOSFET in einem TO-262-Gehäuse; Ähnlich wie IRF9520NL mit bleifreier Verpackung
IRF633 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
IRF632 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
IRF631 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
IRF634STRRPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRR IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRLPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRL IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634SPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634S IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634PBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NSPBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NS IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NPBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634N IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634 IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF640PBF IR10+TO-220Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640LPBF IR10+TO-220Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640L IR10+TO-220Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)

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