ä ̧»é¡μ > 产åä ̧å¿ > åºæåºç®¡
IRF634STRRPBF
产åå3/4çä» ä3/4åè
欢è¿ç'¢å产åè ̄¦ç»èμæ

IRF634STRRPBF

  • æå±ç±»å«ï1/4åºæåºç®¡
  • 产åå称ï1/4N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
  • ååï1/4IR
  • ç产æ¹å·ï1/410+
  • å°è£ ï1/4TO-263
  • åºåç¶æï1/4æåºå
  • åºåéï1/48000
  • æä1/2袮 è'éï1/41
  • è ̄¦ç»èμæï1/4点击查找IRF634STRRPBFçš„pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产åä»ç»

IRF634STRRPBFN-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)

ä ̧IRF634STRRPBFç ̧å ³çICè¿æï1/4


åå·ååæ¹å·å°è£è ̄'æ
IRF630PBF Vishay10+TO-220N-Kanal 200V-0.35Î-9A© - TO-220/FP MESH OVERLAYTM MOSFET (Næ²éåçMOSFET)
IRF633 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
IRF632 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
IRF631 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
UC28023 TI09+08+16PDIP, 16SOICç»æμåé«é PWM æ§å¶å ̈
IRF634STRR IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
UC2527A TI09+16PDIPç ̈³åèå®1/2è°å¶å ̈
IRF634STRLPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRL IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634SPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)

çé ̈æç'¢


åå·ååæ¹å·å°è£è ̄'æ
CM300DY-24J Mitsubishi2021+æ ̈¡åMitsubishi Electric 1200 V 300 IGBTæ ̈¡å, å, PCB, Néé
CM300DY-24Y Mitsubishi2021+æ ̈¡åMitsubishi Electric 1200 V 300 IGBTæ ̈¡å, å, PCB, Néé
PT02E10-6S Amphenol Industrial Operations24+è¿æ¥å ̈CONN RCPT FMALE 6POS LÖTKELCH
KP02A14-15S Amphenol Corporation24+è¿æ¥å ̈Rundsteckverbinder, Buchse, Größe 14, 15 Positionen, Gehäuse, Produktpalette:Pt-Serie,
U-MULTILINK-FX NXP (Englisch)24+å·¥å ·NXP U-MULTILINKé£æå¡å°ç§å1/2å ̈USB-ML-Universal è°è ̄å ̈PE仿çå ̈
KPT02E8-4P ITT24+è¿æ¥å ̈Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE24+DIPHSC-Familie von Leistungswiderständen mit Aluminiumgehäuse 75 W bis 500 W, Verlustfähigkeit, Goldeloxierung und zwei Montageflanschen.
Artikel-Nr.: 27914-30T12 ITT2023+è¿æ¥å ̈Kontaktabmessungen - Stecker F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC)24+å·¥å ·DMCåçº¿é³ åè£ è¿å£æ£å
CMF8342T CMF23+æ ̈¡åTç³»åä ̧æ管æ3/4大å ̈æ ̈¡å
RWR78N39R2FR Vishay24+DIPRES 39,2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI22+继çμå ̈STPI/REL ETP6 Relais nicht selbsthaltend, 6 Blatt, 1 A, 72 VDC
MPS100ASC ä ̧è±2024+å·¥å ·ç²3/4å ̄ä1/2ç1/2®æ£æμå ̈
TFPT1206L1001FV Vishay Dale24+1206SENSOR PTC 1KOHM 1% 1206
CKRA2410 Crydom Inc23+继çμå ̈Halbleiterrelais, 10A 24-280V 90-280V I/P,
KDN-B-110V Mors Smitt2024+继çμå ̈éé/åç ̈³æéè1/21/2åç继çμå ̈KDN-B 110VDC
4403-000LF CTS2024+DIPå3/4®å EMI #4-40 UNC-2A C 滤波å ̈
MPY20W1470FB00MSSD Wima2023+DIP2MP 3-Y2 4700 pF 20% 250 VAC 5x10x13.5 FVRM10
ABCIRH03T14S5SCNF80M32V0 AB Steckverbinder24+è¿æ¥å ̈CONN RCPT FMALE 5POS GOLD CRIMP
M3-A230 MORSSMITT2024+继çμå ̈Steckbares Allzweckrelais

IRåç产åæ ̈è


åå·ååæ¹å·å°è£è ̄'æ
IRF634STRR IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRLPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRL IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634SPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634S IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634PBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NSPBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NS IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NPBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634N IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634 IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF640PBF IR10+TO-220Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640LPBF IR10+TO-220Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640L IR10+TO-220Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640 IR10+TO-220Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640STRRPBF IR10+TO-263Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640STRR IR10+TO-263Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640STRLPBF IR10+TO-263Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640STRL IR10+TO-263Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)
IRF640SPBF IR10+TO-263Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)

åç±»æ£ç'¢

Copyright chip100.com © 2010-2011 MCCT粤ICPå¤14056028å·