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IRF634
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IRF634

  • 所属类别：场效应管
  • 产品名称：N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-220
  • 库存状态：有库存
  • 库存量：8000
  • 最低订购量：1
  • 详细资料：点击查找IRF634的pdf资料
  • 点击询价
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  • 产品介绍

IRF634   N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)

与IRF634相关的IC还有：


型号厂商批号封装说明
IRF634PBF IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634NSPBF IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634NS IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634NPBF IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634N IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF640PBF IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
UC2526A TI10+18PDIP, 18SOIC, 20PLCC稳压脉宽调制器
IRF640LPBF IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640L IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640 IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

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