| åå· | åå | æ¹å· | å°è£ | è ̄'æ |
|
FDS6681Z
| FAIRCHILD | 2010+ | SOP-8 | 30V P-Kanal PowerTrench MOSFET; Gehäuse: SOIC; Anzahl der Pins: 8; Behälter: Tape & Reel |
|
NDS9957
| FAIRCHILD | 2010+ | SOP-8 | Dual N-Channel Enhancement Mode Field Effect Transistorï1/42.6Aï1/460Vï1/40.16Ωï1/4(åNæ²éå¢å1/4ºååºæåºç®¡ï1/4æ1/4çμæμ2.6A, æ1/4æºçμå60Vï1/4å ̄1/4éçμé»0.16Ωï1/4) |
|
HUFA76413DK8T
| FAIRCHILD | 2010+ | SOP-8 | Næ²éé»è3/4çμå¹³UltraFETåçMOSFET 60Vç4.8Aï1/456mз |
|
FDS9945
| FAIRCHILD | 2010+ | SOP-8 | 60V N-Kanal PowerTrench MOSFET; Paket: SO-8; Anzahl der Pins: 8; Behälter: Tape & Reel |
|
FDMS2572
| FAIRCHILD | 2010+ | QFN-56 | N-Kanal UltraFET Trenchâ MOSFET 150V, 27A, 47mз |
|
SFP9540
| FAIRCHILD | 2010+ | TO-220 | P-Kanal Power MOSFET(æ1/4æºçμåä ̧º-100VçPæ²éåçMOSåºæåºç®¡) |
|
RFP70N06
| FAIRCHILD | 2010+ | TO-220 | 70 A, 60 V, 0,014 Ohm, N-Kanal-Leistungs-MOSFETs; Gehäuse: TO-220; Anzahl der Pins: 3; Behälter: Schiene |
|
RFD16N05LSM
| FAIRCHILD | 2010+ | TO-252 | 16A, 50V, 0.047 Ohm, Logikpegel, N-Kanal Leistungs-MOSFETs (16A, 50V, 0.047 Ω N æ²éåçMOSåºæåºç®¡) |
|
RFD14N05LSM9A
| FAIRCHILD | 2010+ | TO-252 | 14 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡) |
|
RFD14N05LSM
| FAIRCHILD | 2010+ | TO-252 | 14 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡) |
|
RFD14N05L
| FAIRCHILD | 2010+ | TO-251 | 14 A, 50 V, 0,100 Ohm, Logikpegel, N-Kanal-Leistungs-MOSFETs (14 A, 50 V, 0,100 Ω, é»è3/4çμå¹³N æ²éåçMOSåºæåºç®¡) |
|
NDT451AN
| FAIRCHILD | 2010+ | SOT-223 | N-Channel Enhancement Mode Field Effect Transistorï1/47.2Aï1/430Vï1/40.035Ωï1/4(Næ²éå¢å1/4ºååºæåºç®¡ï1/4æ1/4çμæμ7.2A, æ1/4æºçμå30Vï1/4å ̄1/4éçμé»0.035Ωï1/4) |
|
NDS356AP
| FAIRCHILD | 2010+ | SOT-23-3 | P-Kanal Logic Level Enhancement Mode Field Effect Transistorï1/4-1.1Aï1/4-30Vï1/40.3Ωï1/4(Pæ²éé»è3/4å¢å1/4ºåMOSåºæåºç®¡ï1/4æ1/4çμæμ-1.1A, æ1/4æºçμå-30Vï1/4å ̄1/4éçμé»0.3Ωï1/4) |
|
NDS355AN
| FAIRCHILD | 2010+ | SOT-23-3 | N-Channel Logic Level Enhancement Mode Field Effect Transistorï1/41.7Aï1/430Vï1/40.125Ωï1/4(Næ²éé»è3/4å¢å1/4ºåMOSåºæåºç¡ï1®/4æ1/4çμæμ1.7A, æ1/4æºçμå30Vï1/4å ̄1/4éçμé» 0.125Ωï1/4) |
|
NDS352AP
| FAIRCHILD | 2010+ | SOT-23-3 | P-Kanal Logic Level Enhancement Mode Field Effect Transistorï1/4-0.9Aï1/4-30Vï1/40.5Ωï1/4(Pæ²éé»è3/4å¢å1/4ºåMOSåºæåºç®¡ï1/4æ1/4çμæμ-0.9A, æ1/4æºçμå-30Vï1/4å ̄1/4éçμé»0.5Ωï1/4) |
|
FDN5630_NL
| FAIRCHILD | 2010+ | SOT-23 | 60V N-Kanal PowerTrench MOSFET; Paket: SuperSOT; Anzahl der Pins: 3; Behälter: Tape & Reel |
|
MTP3055VL
| FAIRCHILD | 2010+ | TO-220 | Næ²éå¢å1/4ºæ ̈¡å1/4çé»è3/4çμå¹³åºæåºæ¶ä1/2管 N-Kanal Logic Level Enhancement Mode Feldeffekttransistor; Gehäuse: TO-220AB; Anzahl der Pins: 3; Behälter: Schiene |
|
HUF76407D3ST
| FAIRCHILD | 2010+ | TO-252 | 11 A, 60 V, 0,107 Ohm, N-Kanal, UltraFET-Leistungs-MOSFET mit Logikpegel; Gehäuse: TO-252(DPAK); Anzahl der Pins: 2; Behälter: Tape & Reel |
|
HUF75882G3
| FAIRCHILD | 2010+ | TO-220 | 75A, 100V, 0.008 Ohm, N-Kanal UltraFET Leistungs-MOSFET (75A, 100V, 0.008Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡) |
|
HUF75653G3
| FAIRCHILD | 2010+ | TO-220 | 75A, 100V, 0.008 Ohm, N-Kanal UltraFET Leistungs-MOSFET (75A, 100V, 0.008Ω Næ²éé»è3/4çμå¹³åçMOSåºæåºç®¡) |