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PH5330E
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PH5330E

  • 所属类别：场效应管
  • 产品名称：沟道场效应晶体管逻辑电平TrenchMOS
  • 厂商：NXP
  • 生产批号：10+
  • 封装：SOT669
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找PH5330E的pdf资料
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  • 产品介绍

PH5330E    N-沟道场效应晶体管逻辑电平TrenchMOS    Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): [email protected]@4.5V mOhm; VDSmax: 30 V

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型号厂商批号封装说明
PH5330E NXP10+SOT669沟道场效应晶体管逻辑电平TrenchMOS

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