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IRF6215STRLPBF
| INFINEON | 2010+ | TO-263 | 150V Nééåºæåºç®¡ -150V Single P-Channel HEXFET Power MOSFET in einem D2-Pak-Gehäuse; Ähnlich wie IRF6215STRL mit bleifreier Verpackung |
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IRF6215SPBF
| INFINEON | 2010+ | TO-263 | HEXFET® POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ã , ID=-13A ) |
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BSO303P
| INFINEON | 2010+ | SOP-8 | Nééåºæåºç®¡ P-Kanal MOSFETs; Gehäuse: P-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 21,0 mOhm; RDS (ein) (max.) (@4,5 V): 32,0 mOhm; R |
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BSO303SP
| INFINEON | 11+ | SOP-8 | Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: P-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 21,0 mOhm; RDS (ein) (max.) (@4,5 V): 31,0 |
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BSC110N06NS3
| INFINEON | 11+ | TDSON-8 | Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: P-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): 12,0 m |
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BSO301SP
| INFINEON | 11+ | SOP-8 | Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: P-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): 12,0 m |
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BSO080P03S
| INFINEON | 11+ | SOP-8 | Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): -; RD |
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BSO080P03NS3
| INFINEON | 11+ | SOP-8 | Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): -; RD |
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BSO080P03NS3E
| INFINEON | 11+ | SOP-8 | Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): -; RD |
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BSC110N06NS3G
| INFINEON | 11+ | TDSON-8 | Néé60.0 V 50.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 11,0 mOhm; RDS (o |
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BSC106N025SG
| INFINEON | 11+ | P-DSO-8 | Nééåºæåºç®¡OptiMOSâ¢2 Leistungstransistor |
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BSC100N06LS3G
| INFINEON | 11+ | TDSON-8 | Néé 60.0 V 50.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 10,0 mOhm; RDS ( |
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BSC152N10NSFG
| INFINEON | 11+ | TDSON-8 | Néé 100.0 V 63.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 15,2 mOhm; RDS |
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BSC085N025SG
| INFINEON | 11+ | TDSON-8 | Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor |
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BSC076N06NS3G
| INFINEON | 11+ | TDSON-8 | Néé60.0 V 50.0 A åºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 7,6 mOhm; RDS (o |
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BSC072N025SG
| INFINEON | 11+ | TDSON-8 | Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor |
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BSC067N06LS3G
| INFINEON | 11+ | TDSON-8 | Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor |
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BSC118N10NSG
| INFINEON | 11+ | P-DSO-8 | Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor |
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BSC048N025SG
| INFINEON | 11+ | P-DSO-8 | Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor |
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BSC037N025SG
| INFINEON | 11+ | P-DSO-8 | Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor |