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  • 产åå称ï1/4Néé60.0 V 50.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 11,0 mOhm; RDS (o
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BSC110N06NS3G Néé60.0 V 50.0 Aåºæåºç®¡N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 11,0 mOhm; RDS (ein) (max.) (@4,5 V): -; Zulässigkeit (max.): 50,0 A;

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BSC110N06NS3 INFINEON11+TDSON-8Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: P-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): 12,0 m
BSO301SP INFINEON11+SOP-8Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: P-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): 12,0 m
BSO080P03S INFINEON11+SOP-8Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): -; RD
BSO080P03NS3 INFINEON11+SOP-8Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): -; RD
BSO080P03NS3E INFINEON11+SOP-8Néé30.0 V åºæåºç®¡P-Kanal-MOSFETs; Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): -30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): -; RD
BSC106N025SG INFINEON11+P-DSO-8Nééåºæåºç®¡OptiMOSâ¢2 Leistungstransistor
BSC100N06LS3G INFINEON11+TDSON-8Néé 60.0 V 50.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 10,0 mOhm; RDS (
BSC152N10NSFG INFINEON11+TDSON-8Néé 100.0 V 63.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 15,2 mOhm; RDS
BSC085N025SG INFINEON11+TDSON-8Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor
BSC076N06NS3G INFINEON11+TDSON-8Néé60.0 V 50.0 A åºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 7,6 mOhm; RDS (o

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RDE7U3A472J4K1H03B Murata Manufacturing Co Ltd24+DIPKondensator: Keramik, 4,7nF, 1kV, U2J, ±5%, THT, 5mm
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RDE7U3A150J2K1H03B Murata Manufacturing Co Ltd24+çμ容Kondensator: Keramik, 15pF, 1kV, U2J, ±5%, THT, 5mm
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)
Nr. C-1106437 TE Connectivity24+è¿æ¥å ̈Steckverbinder Zubehör Haube Aluminiumdruckguss loses Stück
KH208-8 Vitrohm24+DIPWiderstand, 100 Milliohm, ï¿1/2 10%, 5 W, axial bedrahtet, drahtgewickelt, Stromversorgung (Alt: KHS500KB-AX-R1AA)
GAP26MDS5T0000 Amphenol Positronic23+DIP©ç å1/2¢ MIL è§æ 1/4è¿æ¥å ̈
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A309560C7W Amphenol Energy Technologies24+è¿æ¥å ̈309 Stecker,3P+N+E / 5W - 60A - Stecker - 277/480V keway 7h,IP67
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BSC106N025SG INFINEON11+P-DSO-8Nééåºæåºç®¡OptiMOSâ¢2 Leistungstransistor
BSC100N06LS3G INFINEON11+TDSON-8Néé 60.0 V 50.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 10,0 mOhm; RDS (
BSC152N10NSFG INFINEON11+TDSON-8Néé 100.0 V 63.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 15,2 mOhm; RDS
BSC085N025SG INFINEON11+TDSON-8Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor
BSC076N06NS3G INFINEON11+TDSON-8Néé60.0 V 50.0 A åºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 7,6 mOhm; RDS (o
BSC072N025SG INFINEON11+TDSON-8Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor
BSC067N06LS3G INFINEON11+TDSON-8Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor
BSC118N10NSG INFINEON11+P-DSO-8Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor
BSC048N025SG INFINEON11+P-DSO-8Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor
BSC037N025SG INFINEON11+P-DSO-8Néé åºæåºç®¡OptiMOSâ¢2 Power-Transistor
BSC035N04LSG INFINEON11+SON-8Geb. 40,0 V; 100,0 Aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 3,5 mOhm; RDS (
BSC028N06LS3G INFINEON11+SON-8Geb. 60,0 V; 100,0 Aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 2,8 mOhm; RDS (
BSC027N04LSG INFINEON11+SON-8Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 2,7 mOhm; RDS (o
BSC024N025SG INFINEON11+SON-8Néé 40.0 V 100.0 aåºæåºç®¡OptiMOSã¢2 Power-Transistor
BSC020N025SG INFINEON11+TDSON-8Néé 40.0 V 100.0 aåºæåºç®¡OptiMOSã¢2 Power-Transistor
BSC019N04NSG INFINEON11+TDSON-8Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 1,9 mOhm; RDS (o
BSC018N04LSG INFINEON11+TDSON-8Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 1,6 mOhm; RDS (o
BSC017N04NSG INFINEON11+TDSON-8Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 1,6 mOhm; RDS (o
BSC016N04LSG INFINEON11+TDSON-8Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 1,6 mOhm; RDS (o
BSC252N10NSFG INFINEON11+TDSON-8Néé 100.0 V 40.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 25,2 mOhm; RDS

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