型号 | 厂商 | 批号 | 封装 | 说明 |
BSO080P03NS3E
| INFINEON | 11+ | SOP-8 | N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
BSC110N06NS3G
| INFINEON | 11+ | TDSON-8 | N通道60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o |
BSC106N025SG
| INFINEON | 11+ | P-DSO-8 | N通道场效应管OptiMOS㈢2 Power-Transistor |
BSC100N06LS3G
| INFINEON | 11+ | TDSON-8 | N通道 60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |
BSC152N10NSFG
| INFINEON | 11+ | TDSON-8 | N通道 100.0 V 63.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS |
BSC085N025SG
| INFINEON | 11+ | TDSON-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
BSC076N06NS3G
| INFINEON | 11+ | TDSON-8 | N通道60.0 V 50.0 A 场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.6 mOhm; RDS (o |
BSC072N025SG
| INFINEON | 11+ | TDSON-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
BSC067N06LS3G
| INFINEON | 11+ | TDSON-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
BSC118N10NSG
| INFINEON | 11+ | P-DSO-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
BSC048N025SG
| INFINEON | 11+ | P-DSO-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
BSC037N025SG
| INFINEON | 11+ | P-DSO-8 | N通道 场效应管OptiMOS㈢2 Power-Transistor |
BSC035N04LSG
| INFINEON | 11+ | SON-8 | N通道 40.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS ( |
BSC028N06LS3G
| INFINEON | 11+ | SON-8 | N通道 60.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.8 mOhm; RDS ( |
BSC027N04LSG
| INFINEON | 11+ | SON-8 | N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (o |
BSC024N025SG
| INFINEON | 11+ | SON-8 | N通道 40.0 V 100.0 A场效应管OptiMOS㈢2 Power-Transistor |
BSC020N025SG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管OptiMOS㈢2 Power-Transistor |
BSC019N04NSG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.9 mOhm; RDS (o |
BSC018N04LSG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |
BSC017N04NSG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |