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BSC067N06LS3G
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BSC067N06LS3G

  • 所属类别：场效应管
  • 产品名称：N通道 场效应管OptiMOS㈢2 Power-Transistor
  • 厂商：INFINEON
  • 生产批号：11+
  • 封装：TDSON-8
  • 库存状态：有库存
  • 库存量：35000
  • 最低订购量：1
  • 详细资料：点击查找BSC067N06LS3G的pdf资料
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  • 产品介绍

BSC067N06LS3G  N通道 场效应管OptiMOS㈢2 Power-Transistor

与BSC067N06LS3G相关的IC还有：


型号厂商批号封装说明
BSC100N06LS3G INFINEON11+TDSON-8N通道 60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC152N10NSFG INFINEON11+TDSON-8N通道 100.0 V 63.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS
BSC085N025SG INFINEON11+TDSON-8N通道 场效应管OptiMOS㈢2 Power-Transistor
BSC076N06NS3G INFINEON11+TDSON-8N通道60.0 V 50.0 A 场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.6 mOhm; RDS (o
BSC072N025SG INFINEON11+TDSON-8N通道 场效应管OptiMOS㈢2 Power-Transistor
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BSC048N025SG INFINEON11+P-DSO-8N通道 场效应管OptiMOS㈢2 Power-Transistor
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BSC035N04LSG INFINEON11+SON-8N通道 40.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS (

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型号厂商批号封装说明
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BSC035N04LSG INFINEON11+SON-8N通道 40.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS (
BSC028N06LS3G INFINEON11+SON-8N通道 60.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.8 mOhm; RDS (
BSC027N04LSG INFINEON11+SON-8N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (o
BSC024N025SG INFINEON11+SON-8N通道 40.0 V 100.0 A场效应管OptiMOS㈢2 Power-Transistor
BSC020N025SG INFINEON11+TDSON-8N通道 40.0 V 100.0 A场效应管OptiMOS㈢2 Power-Transistor
BSC019N04NSG INFINEON11+TDSON-8N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.9 mOhm; RDS (o
BSC018N04LSG INFINEON11+TDSON-8N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o
BSC017N04NSG INFINEON11+TDSON-8N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o
BSC016N04LSG INFINEON11+TDSON-8N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o
BSC252N10NSFG INFINEON11+TDSON-8N通道 100.0 V 40.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.2 mOhm; RDS
BSC196N10NSG INFINEON11+TDSON-8N通道 100.0 V 45.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 19.6 mOhm; RDS
BSO615NV INFINEON11+SOP-8小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (
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BSC190N15NS3G INFINEON11+TDSON-8N通道 150.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 150.0 V; RDS (on) (max) (@10V): 19.0 mOhm; RDS
BSC050N03LSG INFINEON11+TDSON-8N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC050N03MSG INFINEON11+TDSON-8N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC042N03LSG INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5

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