型号 | 厂商 | 批号 | 封装 | 说明 |
BSC024N025SG
| INFINEON | 11+ | SON-8 | N通道 40.0 V 100.0 A场效应管OptiMOS㈢2 Power-Transistor |
BSC020N025SG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管OptiMOS㈢2 Power-Transistor |
BSC019N04NSG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.9 mOhm; RDS (o |
BSC018N04LSG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |
BSC017N04NSG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |
BSC016N04LSG
| INFINEON | 11+ | TDSON-8 | N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |
BSC252N10NSFG
| INFINEON | 11+ | TDSON-8 | N通道 100.0 V 40.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.2 mOhm; RDS |
BSC196N10NSG
| INFINEON | 11+ | TDSON-8 | N通道 100.0 V 45.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 19.6 mOhm; RDS |
BSO615NV
| INFINEON | 11+ | SOP-8 | 小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) ( |
BSO615N
| INFINEON | 11+ | SOP-8 | 小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) ( |
BSC190N15NS3G
| INFINEON | 11+ | TDSON-8 | N通道 150.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 150.0 V; RDS (on) (max) (@10V): 19.0 mOhm; RDS |
BSC050N03LSG
| INFINEON | 11+ | TDSON-8 | N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS |
BSC050N03MSG
| INFINEON | 11+ | TDSON-8 | N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS |
BSC042N03LSG
| INFINEON | 11+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5 |
BSC042N03MSG
| INFINEON | 11+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5 |
BSC042N03SG
| INFINEON | 11+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5 |
BSC032N03SG
| INFINEON | 11+ | TDSON-8 | N沟道 30.0 V 100.0 A;场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.2 mOhm; R |
BSC079N03S
| INFINEON | 11+ | SOP-8 | N沟道 30.0 V 40.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RD |
BSC057N08NS3
| INFINEON | 11+ | SON-8 | N沟道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS |
BSC100N03LS
| INFINEON | 11+ | P-TDSON-8 | N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS |