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IPI14N03LA åçæ¶ä1/2管MULTI DVI DAISY CHAINABLE EMPFÄNGER - FASER

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IPI35CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI26CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.)
IPI26CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.
IPI16CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.)
IPI16CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.
IPI12CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 12,6 mOhm; RDS (ein) (max.)
IPI12CN10N INFINEON2010+TO-262åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 12,9 mOhm; RDS (ein) (max.
IPI11N03LA INFINEON2010+TO-262åçæ¶ä1/2管
IPI09N03LA INFINEON2010+TO262-3åçæ¶ä1/2管
IPI08CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)

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DPX2ME-A106SA106S-34B-0001 ITT22+è¿æ¥å ̈Zirkulärer MIL-Steckverbinder
DPX2MEA106PA106P-33B-0401 ITT Interconnect-Lösungen24+è¿æ¥å ̈Conn Rack und Panel ARINC 404 SKT/SKT (106/106)Signal POS Crimp ST Panel
ACB1/PG-4S-S34 VERSCHIEDENES24+è¿æ¥å ̈VERBINDER
ACB1/BK-4S-S34 VERSCHIEDENES24+è¿æ¥å ̈VERBINDER
0-1103277-1 TE Connectivity24+è¿æ¥å ̈Anschlussgehäuse M 12 POS Crimp ST Kabelhalterung Grau Lose
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CIRH03T1610PCNF80M32V0 TE/AMP24+è¿æ¥å ̈CONN RCPT HSNG STECKER 3POS PNL MNT
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IPI12CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 12,6 mOhm; RDS (ein) (max.)
IPI12CN10N INFINEON2010+TO-262åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 12,9 mOhm; RDS (ein) (max.
IPI11N03LA INFINEON2010+TO-262åçæ¶ä1/2管
IPI09N03LA INFINEON2010+TO262-3åçæ¶ä1/2管
IPI08CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)
IPI08CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)
IPI06N03LA INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 6,2 mOhm; RDS (ein) (max.) (
IPI06CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 6,5 mOhm; RDS (ein) (max.)
IPI06CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 6,5 mOhm; RDS (ein) (max.)
IPI05N03LA INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 4,9 mOhm; RDS (ein) (max.) (
IPI05CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 5,4 mOhm; RDS (ein) (max.)
IPI05CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 5,4 mOhm; RDS (ein) (max.)
IPI04N03LA INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 4,2 mOhm; RDS (ein) (max.) (
IPI03N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,0 mOhm; RDS (ein) (max.)
IPFH6N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 12,8 mOhm;
IPF13N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 12,8 mOhm;
IPF10N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 10,4 mOhm;
IPF09N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 8,8 mOhm;
IPF06N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 Rundsteckverbinder; Körpermaterial: Aluminium; Serie:PT06; Anzahl der Kontakte:61; Größe der Steckerschale: 24; Anschluss: Crimpen; Kreisförmig
IPF05N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 5,3 mOhm;

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