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  • 产åå称ï1/4åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.
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IPI26CN10N åçæ¶ä1/2管N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.) (@4,5 V): -; Zulässigkeit (max.): 35,0 A;

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IPP015N04N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI80CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI50CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI35CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI26CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.)
IPI16CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.)
IPI16CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.
IPI14N03LA INFINEON2010+PG-TO262-3åçæ¶ä1/2管 MULTI DVI DAISY CHAINABLE RECEIVER -FIBER
IPI12CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 12,6 mOhm; RDS (ein) (max.)
IPI12CN10N INFINEON2010+TO-262åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 12,9 mOhm; RDS (ein) (max.

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IPI16CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.)
IPI16CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.
IPI14N03LA INFINEON2010+PG-TO262-3åçæ¶ä1/2管 MULTI DVI DAISY CHAINABLE RECEIVER -FIBER
IPI12CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 12,6 mOhm; RDS (ein) (max.)
IPI12CN10N INFINEON2010+TO-262åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 12,9 mOhm; RDS (ein) (max.
IPI11N03LA INFINEON2010+TO-262åçæ¶ä1/2管
IPI09N03LA INFINEON2010+TO262-3åçæ¶ä1/2管
IPI08CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)
IPI08CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)
IPI06N03LA INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 6,2 mOhm; RDS (ein) (max.) (
IPI06CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 6,5 mOhm; RDS (ein) (max.)
IPI06CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 6,5 mOhm; RDS (ein) (max.)
IPI05N03LA INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 4,9 mOhm; RDS (ein) (max.) (
IPI05CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 5,4 mOhm; RDS (ein) (max.)
IPI05CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 5,4 mOhm; RDS (ein) (max.)
IPI04N03LA INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 4,2 mOhm; RDS (ein) (max.) (
IPI03N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,0 mOhm; RDS (ein) (max.)
IPFH6N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 12,8 mOhm;
IPF13N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 12,8 mOhm;
IPF10N03LA INFINEON2010+SOT-252åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: Reverse DPAK (Reverse TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 10,4 mOhm;

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