型号 | 厂商 | 批号 | 封装 | 说明 |
IPI26CN10N
| INFINEON | 2010+ | PG-TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max |
IPI16CNE8N
| INFINEON | 2010+ | PG-TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max) |
IPI16CN10N
| INFINEON | 2010+ | PG-TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max |
IPI14N03LA
| INFINEON | 2010+ | PG-TO262-3 | 功率晶体管 MULTI DVI DAISY CHAINABLE RECEIVER -FIBER |
IPI12CNE8N
| INFINEON | 2010+ | PG-TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.6 mOhm; RDS (on) (max) |
IPI12CN10N
| INFINEON | 2010+ | TO-262 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max |
IPI11N03LA
| INFINEON | 2010+ | TO-262 | 功率晶体管 |
IPI09N03LA
| INFINEON | 2010+ | TO262-3 | 功率晶体管 |
IPI08CNE8N
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max) |
IPI08CN10N
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max) |
IPI06N03LA
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) ( |
IPI06CNE8N
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) |
IPI06CN10N
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) |
IPI05N03LA
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.9 mOhm; RDS (on) (max) ( |
IPI05CNE8N
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) |
IPI05CN10N
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) |
IPI04N03LA
| INFINEON | 2010+ | TO262-3 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) ( |
IPI03N03LA
| INFINEON | 2010+ | SOT-252 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) |
IPFH6N03LA
| INFINEON | 2010+ | SOT-252 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 12.8 mOhm; |
IPF13N03LA
| INFINEON | 2010+ | SOT-252 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 12.8 mOhm; |