| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
IRFR9120NCTRPBF
| IR | 10+ | SOT-263 | P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) |
|
IRF5210LPBF
| IR | 10+ | SOT-263 | HEXFET Power MOSFET |
|
IRF9540NLPBF
| IR | 10+ | SOT-263 | HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A ) |
|
IRF9530NLPBF
| IR | 10+ | TO-262 | Advanced Process Technology Surface Mount |
|
IRF9520NLPBF
| IR | 10+ | TO-235 | -100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9520NL with Lead Free Packaging |
|
IRF633
| IR | 10+ | TO-220 | N-Channel Power MOSFETs, 12A, 150-200 V |
|
IRF632
| IR | 10+ | TO-220 | N-Channel Power MOSFETs, 12A, 150-200 V |
|
IRF631
| IR | 10+ | TO-220 | N-Channel Power MOSFETs, 12A, 150-200 V |
|
IRF634STRRPBF
| IR | 10+ | TO-263 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634STRR
| IR | 10+ | TO-263 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634STRLPBF
| IR | 10+ | TO-263 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634STRL
| IR | 10+ | TO-263 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634SPBF
| IR | 10+ | TO-263 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634S
| IR | 10+ | TO-263 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634PBF
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634NSPBF
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634NS
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634NPBF
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634N
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |