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IRFR9120NCTRPBFP-Kanal oberflächenmontierbarer HEXFET-Leistungs-MOSFET (Pæ²éè¡ ̈è''åHEXFETåçMOSåºæåºç®¡)

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IRFR9120NCTRPBF IR10+SOT-263P-Kanal oberflächenmontierbarer HEXFET-Leistungs-MOSFET (Pæ²éè¡ ̈è''åHEXFETåçMOSåºæåºç®¡)

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CU-U-201-GE Mors Smitt24+继çμå ̈继çμå ̈
FRCIR06-32-8P-F80-T108 ITT Interconnect-Lösungen24+è¿æ¥å ̈CIR 30C 24#16 6#12 STECKER
Artikel-Nr.: SPCI-001-500 欧米è24+DIPè£ ̧ççμå¶çº¿ï1/4JN ï1/4线è1/2'ï1/4 | 欧米è éç»ç1/4 T/C 线ï1/4ç»ç'å3/4ï1/4J å ï1/4-ï1/4ï1/4500' çμç1/4ï1/450 AWGï1/40 °C è³ 315 °Cï1/432 °F è³ 600 °Fï1/4ï1/4SPCI ç³»åï1/4线è1/2"
ET-JL06-18 JAE Elektronik2023+å·¥å ·æééå·¥å ·
JL06-28-SONSTIGES JAE Elektronik24+è¿æ¥å ̈27P
LRC-LRF2512LF-01-R005-F TT23+2512Strommesswiderstände - SMD 2 Watt .005 Ohm 1%
ABCIRH06T2214SCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈ABCIRHç³»åè¿æ¥å ̈ç»ä»¶ å ̈æ°åè£ è¿å£ ç°è'§
ABCIRH00T2214PCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈onnector Reverse Bajonett Kupplung Rund RCP 14S-5 ST Kastenhalterung - Bulk
ABB1240KLKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
ABB1240KPKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
RDE7U3A472J4K1H03B Murata Manufacturing Co Ltd24+DIPKondensator: Keramik, 4,7nF, 1kV, U2J, ±5%, THT, 5mm
C195S/24EV-U2 æ²å°ç¹å®24+DIPè1/2 ̈éè¡ä ̧ä ̧ç ̈æ¥è§¦å ̈C195S/24EV-U2 ç°è'§ç¹ä»·åºå2000åª
ABCIRHSE06T16S8SCNF80M32V0 AB Steckverbinder24+è¿æ¥å ̈Zirkulärer MIL Spec Steckverbinder ER 5C 5#16S SKT STECKER
RDE7U3A150J2K1H03B Murata Manufacturing Co Ltd24+çμ容Kondensator: Keramik, 15pF, 1kV, U2J, ±5%, THT, 5mm
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)
Nr. C-1106437 TE Connectivity24+è¿æ¥å ̈Steckverbinder Zubehör Haube Aluminiumdruckguss loses Stück
KH208-8 Vitrohm24+DIPWiderstand, 100 Milliohm, ï¿1/2 10%, 5 W, axial bedrahtet, drahtgewickelt, Stromversorgung (Alt: KHS500KB-AX-R1AA)
GAP26MDS5T0000 Amphenol Positronic23+DIP©ç å1/2¢ MIL è§æ 1/4è¿æ¥å ̈
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IRF5210LPBF IR10+SOT-263HEXFET-Leistungs-MOSFET
IRF9540NLPBF IR10+SOT-263HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mã , ID = -23A )
IRF9530NLPBF IR10+TO-262Fortschrittliche Prozesstechnologie Oberflächenmontage
IRF9520NLPBF IR10+TO-235-100-V-Einzel-P-Kanal-HEXFET-Leistungs-MOSFET in einem TO-262-Gehäuse; Ähnlich wie IRF9520NL mit bleifreier Verpackung
IRF633 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
IRF632 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
IRF631 IR10+TO-220N-Kanal Leistungs-MOSFETs, 12A, 150-200 V
IRF634STRRPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRR IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRLPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634STRL IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634SPBF IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634S IR10+TO-263N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634PBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NSPBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NS IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634NPBF IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634N IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF634 IR10+TO-220N-Kanal-Leistungs-MOSFET (Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º250Vï1/4å ̄1/4éçμé»ä ̧º0.45Ωï1/4æ1/4çμæμä ̧º8.1Aï1/4)
IRF640PBF IR10+TO-220Leistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,18 Ohm, Id = 18 A)

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