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IPSH4N03LA
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IPSH4N03LA

  • 所属类别:场效应管
  • 产品名称:N沟道场效应管 OPTIMOS 2 POWER - TRANSISTOR
  • 厂商:INFINEON
  • 生产批号:10+
  • 封装:P-TO251-3
  • 库存状态:有库存
  • 库存量:36000
  • 最低订购量:1
  • 详细资料:点击查找IPSH4N03LA的pdf资料
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IPSH4N03LA     N沟道场效应管OPTIMOS 2 POWER - TRANSISTOR 

IPSH4N03LA相关的IC还有:


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IPS060N03L INFINEON10+TO-251N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.0 mOhm; RDS (on)
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IPS04N03LA INFINEON10+P-TO251-3N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPS03N03LB INFINEON10+P-TO251-3N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
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