主页 > 产品中心 > 场效应管
IPS03N03LB
产品图片仅供参考
欢迎索取产品详细资料

IPS03N03LB

  • 所属类别：场效应管
  • 产品名称：N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：P-TO251-3
  • 库存状态：有库存
  • 库存量：36000
  • 最低订购量：1
  • 详细资料：点击查找IPS03N03LB的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IPS03N03LB  N沟道场效应管  N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on) (max) (@4.5V): 5.3 mOhm; ID (max): 90.0 A

与IPS03N03LB相关的IC还有：


型号厂商批号封装说明
IPS060N03L INFINEON10+TO-251N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.0 mOhm; RDS (on)
IPS05N03LB INFINEON10+P-TO251-3N沟道场效应管 RESISTOR CER 7.5K OHM 5W RADIAL
IPS05N03LA INFINEON10+P-TO251-3N沟道场效应管 RESISTOR CER 7.5K OHM 5W RADIAL
IPS04N03LB INFINEON10+P-TO251-3N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPS04N03LA INFINEON10+P-TO251-3N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPS03N03LA INFINEON10+P-TO251-3N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPP80N03S4L INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP80CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP50CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP35CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor

热门搜索


型号厂商批号封装说明
C25-1AX-H13-N-HB-L HAIMOOO24+控制手柄控制手柄
F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATALOGIC22+DIPphotoelectric sensors
M393A8G40BB4-CWE Samsung21+BGASamsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba21+DIPOptocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt24+继电器瞬时继电器
RC16M23D28 SOURIAU-SUNBANK2023+连接器Standard Circular Contacts Crimp Socket Contact 16-20 AWG
CM300DY-24J Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
CM300DY-24Y Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
PT02E10-6S Amphenol Industrial Operations24+连接器CONN RCPT FMALE 6POS SOLDER CUP
KP02A14-15S Amphenol Corporation24+连接器Circular Connector, Receptacle, Size 14, 15 Position, Box, Product Range:Pt Series,
U-MULTILINK-FX NXP24+工具NXP U-MULTILINK飞思卡尔烧录器USB-ML-Universal 调试器PE仿真器
KPT02E8-4P ITT24+连接器Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE24+DIPHSC Family of Aluminium Housed Power Resistors 75W-500W dissipation capability, Gold anodization and two mounting flanges.
27914-30T12 ITT2023+连接器Contact Dimensions - Male F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC)24+工具DMC压线钳 原装进口正品
CMF8342T CMF23+模块T系列三极管放大器模块
RWR78N39R2FR Vishay24+DIPRES 39.2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI22+继电器STPI/REL ETP6 Relays Non-Latching, 6 PDT, 1 A, 72 VDC
MPS100ASC 三菱2024+工具精密位置检测器

INFINEON品牌产品推荐


型号厂商批号封装说明
IPS03N03LA INFINEON10+P-TO251-3N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPP80N03S4L INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP80CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP50CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP35CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP26CNE8N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP26CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP16CNE8N INFINEON10+PG-TO220-3N沟道场效应管 MULTI DVI TRANSMITTER MULTIMODE -FIBER
IPP16CN10N INFINEON10+T0-220N沟道场效应管 MULTI DVI TRANSMITTER MULTIMODE -FIBER
IPP14N03LA INFINEON10+T0-220N沟道场效应管 MULTI DVI TRANSMITTER MULTIMODE -FIBER
IPP147N03L INFINEON10+T0-220N沟道场效应管
IPP13N03LB INFINEON10+T0-220N沟道场效应管
IPP12CNE8N INFINEON2010+PG-TO220-3功率晶体管 OptiMOS㈢2 Power-Transistor
IPP12CN10N INFINEON2010+PG-TO220-3-功率晶体管 OptiMOS㈢2 Power-Transistor
IPP11N03LA INFINEON2010+TO220-3功率晶体管 OptiMOS㈢2 Power-Transistor
IPP114N03L INFINEON2010+TO-220功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 11.4 mOhm; RDS (on) (max) (@4.5V)
IPP10N03LB INFINEON2010+TO-220功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.9 mOhm; RDS (on) (max) (@4.5V):
IPP100N06S2L05 INFINEON2010+TO-220功率晶体管 OptiMOS㈢-T Power-Transistor
IPP09N03LA INFINEON2010+TO220-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 25.0 V; RDS (on) (max) (@10V): 9.2 mOhm; RDS (on) (max) (@4.5V):
IPP096N03L INFINEON2010+TO-220-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (@4.5V):

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号