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IPP35CN10N
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IPP35CN10N

  • 所属类别：场效应管
  • 产品名称：N沟道场效应管 OptiMOS㈢2 Power-Transistor
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：PG-TO220-3
  • 库存状态：有库存
  • 库存量：36000
  • 最低订购量：1
  • 详细资料：点击查找IPP35CN10N的pdf资料
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  • 产品介绍

IPP35CN10N  N沟道场效应管   OptiMOS㈢2 Power-Transistor

与IPP35CN10N相关的IC还有：


型号厂商批号封装说明
IPS03N03LB INFINEON10+P-TO251-3N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPS03N03LA INFINEON10+P-TO251-3N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPP80N03S4L INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP80CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
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型号厂商批号封装说明
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IPP26CN10N INFINEON10+PG-TO220-3N沟道场效应管 OptiMOS㈢2 Power-Transistor
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IPP11N03LA INFINEON2010+TO220-3功率晶体管 OptiMOS㈢2 Power-Transistor
IPP114N03L INFINEON2010+TO-220功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 11.4 mOhm; RDS (on) (max) (@4.5V)
IPP10N03LB INFINEON2010+TO-220功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.9 mOhm; RDS (on) (max) (@4.5V):
IPP100N06S2L05 INFINEON2010+TO-220功率晶体管 OptiMOS㈢-T Power-Transistor
IPP09N03LA INFINEON2010+TO220-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 25.0 V; RDS (on) (max) (@10V): 9.2 mOhm; RDS (on) (max) (@4.5V):
IPP096N03L INFINEON2010+TO-220-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (@4.5V):
IPP08CNE8N INFINEON2010+PG-TO220-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.4 mOhm; RDS (on) (max) (@4.5V)
IPP08CN10N INFINEON2010+TO-220功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max) (@4.5V
IPP080N03L INFINEON2010+TO-220功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V)
IPP07N03LB INFINEON2010+TO-220功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 150.0 V; RDS (on) (max) (@10V): 7.5 mOhm; RDS (on) (max) (@4.5
IPP075N150N3 INFINEON2010+TO-220功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 150.0 V; RDS (on) (max) (@10V): 7.5 mOhm; RDS (on) (max) (@4.5

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