ä ̧»é¡μ > 产åä ̧å¿ > åºæåºç®¡
IPP11N03LA
产åå3/4çä» ä3/4åè
欢è¿ç'¢å产åè ̄¦ç»èμæ

IPP11N03LA

  • æå±ç±»å«ï1/4åºæåºç®¡
  • 产åå称ï1/4åçæ¶ä1/2管 OptiMOSâ¢2 Leistungstransistor
  • ååï1/4INFINEON
  • ç产æ¹å·ï1/42010+
  • å°è£ ï1/4TO220-3
  • åºåç¶æï1/4æåºå
  • åºåéï1/416000
  • æä1/2袮 è'éï1/41
  • è ̄¦ç»èμæï1/4点击查找IPP11N03LAçš„pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产åä»ç»

IPP11N03LA åçæ¶ä1/2管OptiMOSâ2 Leistungstransistor

ä ̧IPP11N03LAç ̧å ³çICè¿æï1/4


åå·ååæ¹å·å°è£è ̄'æ
SB340G SEP/TSC/11+ROHDIP-4æ¡¥å1/4æ'æμå ̈
SB340 VISHAY09+DO-201ADæ¡¥å1/4æ'æμå ̈æ'æμäºæ管
SB320G SEP10+DIPæ¡¥å1/4æ'æμå ̈
IPP12CNE8N INFINEON2010+PG-TO220-3åçæ¶ä1/2管 OptiMOSâ¢2 Leistungstransistor
IPP12CN10N INFINEON2010+PG-TO220-3-åçæ¶ä1/2管 OptiMOSâ¢2 Leistungstransistor
IPP114N03L INFINEON2010+TO-220åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 11,4 mOhm; RDS (ein) (max.) (@4,5 V)
IPP10N03LB INFINEON2010+TO-220åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,9 mOhm; RDS (ein) (max.) (@4,5 V):
IPP100N06S2L05 INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOSã¢-T Leistungstransistor
IPP09N03LA INFINEON2010+TO220-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 9,2 mOhm; RDS (ein) (max.) (@4,5 V):
IPP096N03L INFINEON2010+TO-220-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,6 mOhm; RDS (ein) (max.) (@4,5 V):

çé ̈æç'¢


åå·ååæ¹å·å°è£è ̄'æ
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)
Nr. C-1106437 TE Connectivity24+è¿æ¥å ̈Steckverbinder Zubehör Haube Aluminiumdruckguss loses Stück
KH208-8 Vitrohm24+DIPWiderstand, 100 Milliohm, ï¿1/2 10%, 5 W, axial bedrahtet, drahtgewickelt, Stromversorgung (Alt: KHS500KB-AX-R1AA)
GAP26MDS5T0000 Amphenol Positronic23+DIP©ç å1/2¢ MIL è§æ 1/4è¿æ¥å ̈
EE046-T11 å3/4·å1/2E+E24+æ ̈¡åå·åæ£æμ仪
A309560C7W Amphenol Energy Technologies24+è¿æ¥å ̈309 Stecker,3P+N+E / 5W - 60A - Stecker - 277/480V keway 7h,IP67
HBL430B7W Hubbell Premise Verkabelung24+è¿æ¥å ̈PS, IEC, EINGANG, 3P4W, 30A 3P 480V,4X/69K
621N-18F-10-6S Amphenol Corporation24+è¿æ¥å ̈Rundsteckverbinder Steckverbinder Stecker Größe 10
LV100-4000/SP6 è±å§24+ä1/4 æå ̈çμæμä1/4 æå ̈å3/4·å1/2ååä ̧æè'§æºä1/4å¿ä3/4åºä ̧
D-U307-KLS Mors Smitt24+继çμå ̈Relais - Steckbar, 4-polig, AC-Spule
TDB4-U204-C Mors Smitt24+继çμå ̈延æ¶ç»§μå ̈
ABCIRH01RC2214PCNF80M32V0 AB Steckverbinder23+è¿æ¥å ̈è¿æ¥å ̈å¥è£
ABCIRH01RC2214PCWF80M32V0 AB Steckverbinder23+è¿æ¥å ̈è¿æ¥å ̈å¥è£
ABCIRH01RC1812PCNF80M32V0 AB Steckverbinder23+è¿æ¥å ̈è¿æ¥å ̈å¥è£
AB0521001412PN00 AB Steckverbinder24+è¿æ¥å ̈åå1/2¢è¿æ¥å ̈, AB05, MIL-DTL-26482 iç³»å, å¢å£å®è£ æ座, 12 触ç¹, çæ¥å1/4è, å¡å£
TM-I2000/115-230P ABB24+ååå ̈Einphasiger Steuer- und Trenntransformator
C25-1AX-H13-N-HB-L HAIMOOO24+æ§å¶æææ§å¶ææ
F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATENLOGIK22+DIPOptoelektronische Sensoren

INFINEONåç产åæ ̈è


åå·ååæ¹å·å°è£è ̄'æ
IPP114N03L INFINEON2010+TO-220åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 11,4 mOhm; RDS (ein) (max.) (@4,5 V)
IPP10N03LB INFINEON2010+TO-220åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,9 mOhm; RDS (ein) (max.) (@4,5 V):
IPP100N06S2L05 INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOSã¢-T Leistungstransistor
IPP09N03LA INFINEON2010+TO220-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 9,2 mOhm; RDS (ein) (max.) (@4,5 V):
IPP096N03L INFINEON2010+TO-220-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,6 mOhm; RDS (ein) (max.) (@4,5 V):
IPP08CNE8N INFINEON2010+PG-TO220-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 6,4 mOhm; RDS (ein) (max.) (@4,5 V)
IPP08CN10N INFINEON2010+TO-220åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.) (@4,5 V
IPP080N03L INFINEON2010+TO-220åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V)
IPP07N03LB INFINEON2010+TO-220åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 150,0 V; RDS (ein) (max.) (@10V): 7,5 mOhm; RDS (an) (max.) (@4,5
IPP075N150N3 INFINEON2010+TO-220åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO220-3; Gehäuse: TO-220; VDS (max): 150,0 V; RDS (ein) (max.) (@10V): 7,5 mOhm; RDS (an) (max.) (@4,5
IPP06N03LA INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP06CNE8N INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP06CN10N INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP05N03LA INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP05CN10N INFINEON2010+PG-TO220-2åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP054NE8N INFINEON2010+PG-TO220-2åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP04N03LB INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP04CN10N INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP040N06N3 INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP03N03LA INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor

åç±»æ£ç'¢

Copyright chip100.com © 2010-2011 MCCT粤ICPå¤14056028å·