ä ̧»é¡μ > 产åä ̧å¿ > åºæåºç®¡
IPP03N03LA
产åå3/4çä» ä3/4åè
欢è¿ç'¢å产åè ̄¦ç»èμæ

IPP03N03LA

  • æå±ç±»å«ï1/4åºæåºç®¡
  • 产åå称ï1/4åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
  • ååï1/4INFINEON
  • ç产æ¹å·ï1/42010+
  • å°è£ ï1/4TO-220
  • åºåç¶æï1/4æåºå
  • åºåéï1/416000
  • æä1/2袮 è'éï1/41
  • è ̄¦ç»èμæï1/4点击查找IPP03N03LAçš„pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产åä»ç»

IPP03N03LA åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor

ä ̧IPP03N03LAç ̧å ³çICè¿æï1/4


åå·ååæ¹å·å°è£è ̄'æ
IPP05CN10N INFINEON2010+PG-TO220-2åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP054NE8N INFINEON2010+PG-TO220-2åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP04N03LB INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP04CN10N INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP040N06N3 INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP034N03L INFINEON2010+TO-220åçæ¶ä1/2管
IPP030N10N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP028N08N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP024N06N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP015N04N INFINEON2010+PG-TO262-3åçæ¶ä1/2管

çé ̈æç'¢


åå·ååæ¹å·å°è£è ̄'æ
C25-1AX-H13-N-HB-L HAIMOOO24+æ§å¶æææ§å¶ææ
F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATENLOGIK22+DIPOptoelektronische Sensoren
M393A8G40BB4-CWE Samsung (Englisch)21+BGA (Englisch)Samsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba21+DIPOptokoppler DC-IN 1-CH Transistor mit Basis DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt24+继çμå ̈ç¬æ¶ç»§çμå ̈
RC16M23D28 SOURIAU-SONNENBANK2023+è¿æ¥å ̈Standard-Rundkontakte Crimp-Buchsenkontakt 16-20 AWG
CM300DY-24J Mitsubishi2021+æ ̈¡åMitsubishi Electric 1200 V 300 IGBTæ ̈¡å, å, PCB, Néé
CM300DY-24Y Mitsubishi2021+æ ̈¡åMitsubishi Electric 1200 V 300 IGBTæ ̈¡å, å, PCB, Néé
PT02E10-6S Amphenol Industrial Operations24+è¿æ¥å ̈CONN RCPT FMALE 6POS LÖTKELCH
KP02A14-15S Amphenol Corporation24+è¿æ¥å ̈Rundsteckverbinder, Buchse, Größe 14, 15 Positionen, Gehäuse, Produktpalette:Pt-Serie,
U-MULTILINK-FX NXP (Englisch)24+å·¥å ·NXP U-MULTILINKé£æå¡å°ç§å1/2å ̈USB-ML-Universal è°è ̄å ̈PE仿çå ̈
KPT02E8-4P ITT24+è¿æ¥å ̈Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE24+DIPHSC-Familie von Leistungswiderständen mit Aluminiumgehäuse 75 W bis 500 W, Verlustfähigkeit, Goldeloxierung und zwei Montageflanschen.
Artikel-Nr.: 27914-30T12 ITT2023+è¿æ¥å ̈Kontaktabmessungen - Stecker F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC)24+å·¥å ·DMCåçº¿é³ åè£ è¿å£æ£å
CMF8342T CMF23+æ ̈¡åTç³»åä ̧æ管æ3/4大å ̈æ ̈¡å
RWR78N39R2FR Vishay24+DIPRES 39,2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI22+继çμå ̈STPI/REL ETP6 Relais nicht selbsthaltend, 6 Blatt, 1 A, 72 VDC
MPS100ASC ä ̧è±2024+å·¥å ·ç²3/4å ̄ä1/2ç1/2®æ£æμå ̈

INFINEONåç产åæ ̈è


åå·ååæ¹å·å°è£è ̄'æ
IPP034N03L INFINEON2010+TO-220åçæ¶ä1/2管
IPP030N10N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP028N08N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP024N06N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP015N04N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI80CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI50CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI35CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI26CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.)
IPI26CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.
IPI16CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.)
IPI16CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.
IPI14N03LA INFINEON2010+PG-TO262-3åçæ¶ä1/2管 MULTI DVI DAISY CHAINABLE RECEIVER -FIBER
IPI12CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 12,6 mOhm; RDS (ein) (max.)
IPI12CN10N INFINEON2010+TO-262åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 12,9 mOhm; RDS (ein) (max.
IPI11N03LA INFINEON2010+TO-262åçæ¶ä1/2管
IPI09N03LA INFINEON2010+TO262-3åçæ¶ä1/2管
IPI08CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)
IPI08CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)
IPI06N03LA INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 6,2 mOhm; RDS (ein) (max.) (

åç±»æ£ç'¢

Copyright chip100.com © 2010-2011 MCCT粤ICPå¤14056028å·