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IPP04N03LB INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP04CN10N INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP040N06N3 INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP03N03LA INFINEON2010+TO-220åçæ¶ä1/2管 OptiMOS 2 Leistungstransistor
IPP034N03L INFINEON2010+TO-220åçæ¶ä1/2管
IPP028N08N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP024N06N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP015N04N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI80CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI50CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管

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KPT02E8-4P ITT24+è¿æ¥å ̈Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE24+DIPHSC-Familie von Leistungswiderständen mit Aluminiumgehäuse 75 W bis 500 W, Verlustfähigkeit, Goldeloxierung und zwei Montageflanschen.
Artikel-Nr.: 27914-30T12 ITT2023+è¿æ¥å ̈Kontaktabmessungen - Stecker F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC)24+å·¥å ·DMCåçº¿é³ åè£ è¿å£æ£å
CMF8342T CMF23+æ ̈¡åTç³»åä ̧æ管æ3/4大å ̈æ ̈¡å
RWR78N39R2FR Vishay24+DIPRES 39,2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI22+继çμå ̈STPI/REL ETP6 Relais nicht selbsthaltend, 6 Blatt, 1 A, 72 VDC
MPS100ASC ä ̧è±2024+å·¥å ·ç²3/4å ̄ä1/2ç1/2®æ£æμå ̈
TFPT1206L1001FV Vishay Dale24+1206SENSOR PTC 1KOHM 1% 1206
CKRA2410 Crydom Inc23+继çμå ̈Halbleiterrelais, 10A 24-280V 90-280V I/P,
KDN-B-110V Mors Smitt2024+继çμå ̈éé/åç ̈³æéè1/21/2åç继çμå ̈KDN-B 110VDC
4403-000LF CTS2024+DIPå3/4®å EMI #4-40 UNC-2A C 滤波å ̈
MPY20W1470FB00MSSD Wima2023+DIP2MP 3-Y2 4700 pF 20% 250 VAC 5x10x13.5 FVRM10
ABCIRH03T14S5SCNF80M32V0 AB Steckverbinder24+è¿æ¥å ̈CONN RCPT FMALE 5POS GOLD CRIMP
M3-A230 MORSSMITT2024+继çμå ̈Steckbares Allzweckrelais
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81-206-01 Elma Elektronik24+è¿æ¥å ̈Der 81-206-01 ist ein unterer Griff ohne ESD-Stift. Optionale Schrauben zur Befestigung von Frontplatten: M2,5,: 61-295.
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IPP028N08N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP024N06N3 INFINEON2010+TO-220åçæ¶ä1/2管
IPP015N04N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI80CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI50CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI35CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管
IPI26CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.)
IPI26CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 26,0 mOhm; RDS (ein) (max.
IPI16CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.)
IPI16CN10N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 16,5 mOhm; RDS (ein) (max.
IPI14N03LA INFINEON2010+PG-TO262-3åçæ¶ä1/2管 MULTI DVI DAISY CHAINABLE RECEIVER -FIBER
IPI12CNE8N INFINEON2010+PG-TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 12,6 mOhm; RDS (ein) (max.)
IPI12CN10N INFINEON2010+TO-262åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 12,9 mOhm; RDS (ein) (max.
IPI11N03LA INFINEON2010+TO-262åçæ¶ä1/2管
IPI09N03LA INFINEON2010+TO262-3åçæ¶ä1/2管
IPI08CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)
IPI08CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,5 mOhm; RDS (ein) (max.)
IPI06N03LA INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 6,2 mOhm; RDS (ein) (max.) (
IPI06CNE8N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 6,5 mOhm; RDS (ein) (max.)
IPI06CN10N INFINEON2010+TO262-3åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 6,5 mOhm; RDS (ein) (max.)

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