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IPS09N03LB
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IPS09N03LB

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  • 产åå称ï1/4Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,0 mOhm; RDS (ein)
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IPS09N03LBN-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,0 mOhm; RDS (ein) (max.) (@4,5 V): 13,5 mOhm; Bezeichnung (max): 40,0 A

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IPSH5N03LA INFINEON10+P-TO251-3Næ²éåºæåºç®¡ OptiMOSâ¢2 Leistungstransistor
IPSH4N03LA INFINEON10+P-TO251-3Næ²éåºæåºç®¡ OPTIMOS 2 POWER - TRANSISTOR
SB605 PEC10+TO-3Pæ¡¥å1/4æ'æμå ̈
IPS13N03LA INFINEON10+P-TO251-3Næ²éåºæåºç®¡
IPS10N03LA INFINEON10+P-TO251-3Næ²éåºæåºç®¡
SB604G TSC (Englisch)10+DIP-4æ¡¥å1/4æ'æμå ̈
SB604 PANJIT07+TO-3Pæ¡¥å1/4æ'æμå ̈
IPS090N03L INFINEON10+TO-251Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,0 mOhm; RDS (ein)
SB603G SEP/TSC11+ROHDIP-4æ¡¥å1/4æ'æμå ̈
IPS060N03L INFINEON10+TO-251Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 6,0 mOhm; RDS (ein)

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Nr. Z52929 ITT24+è¿æ¥å ̈Standard-Rundsteckverbinder CIR 3C 3#12 FR PIN RECP
JAE. JIT. OCHSE-16 JAE Elektronik2023+è¿æ¥å ̈16#ééå ̈
RCS20M-12RD28 SOURIAU-SONNENBANK2023+è¿æ¥å ̈Zirkuläre MIL-Spezifikationskontakte CONTACT
PW620-41M5kΩ129 FSG24+çμä1/2å ̈PW620-41 M 5k Ω/129°Çμä1/2Å ̈
CU-U-201-GE Mors Smitt24+继çμå ̈继çμå ̈
FRCIR06-32-8P-F80-T108 ITT Interconnect-Lösungen24+è¿æ¥å ̈CIR 30C 24#16 6#12 STECKER
Artikel-Nr.: SPCI-001-500 欧米è24+DIPè£ ̧ççμå¶çº¿ï1/4JN ï1/4线è1/2'ï1/4 | 欧米è éç»ç1/4 T/C 线ï1/4ç»ç'å3/4ï1/4J å ï1/4-ï1/4ï1/4500' çμç1/4ï1/450 AWGï1/40 °C è³ 315 °Cï1/432 °F è³ 600 °Fï1/4ï1/4SPCI ç³»åï1/4线è1/2"
ET-JL06-18 JAE Elektronik2023+å·¥å ·æééå·¥å ·
JL06-28-SONSTIGES JAE Elektronik24+è¿æ¥å ̈27P
LRC-LRF2512LF-01-R005-F TT23+2512Strommesswiderstände - SMD 2 Watt .005 Ohm 1%
ABCIRH06T2214SCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈ABCIRHç³»åè¿æ¥å ̈ç»ä»¶ å ̈æ°åè£ è¿å£ ç°è'§
ABCIRH00T2214PCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈onnector Reverse Bajonett Kupplung Rund RCP 14S-5 ST Kastenhalterung - Bulk
ABB1240KLKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
ABB1240KPKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
RDE7U3A472J4K1H03B Murata Manufacturing Co Ltd24+DIPKondensator: Keramik, 4,7nF, 1kV, U2J, ±5%, THT, 5mm
C195S/24EV-U2 æ²å°ç¹å®24+DIPè1/2 ̈éè¡ä ̧ä ̧ç ̈æ¥è§¦å ̈C195S/24EV-U2 ç°è'§ç¹ä»·åºå2000åª
ABCIRHSE06T16S8SCNF80M32V0 AB Steckverbinder24+è¿æ¥å ̈Zirkulärer MIL Spec Steckverbinder ER 5C 5#16S SKT STECKER
RDE7U3A150J2K1H03B Murata Manufacturing Co Ltd24+çμ容Kondensator: Keramik, 15pF, 1kV, U2J, ±5%, THT, 5mm
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)

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IPS090N03L INFINEON10+TO-251Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,0 mOhm; RDS (ein)
IPS060N03L INFINEON10+TO-251Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 6,0 mOhm; RDS (ein)
IPS05N03LB INFINEON10+P-TO251-3Næ²éåºæåºç®¡ RESISTOR CER 7.5K OHM 5W RADIAL
IPS05N03LA INFINEON10+P-TO251-3Næ²éåºæåºç®¡ RESISTOR CER 7.5K OHM 5W RADIAL
IPS04N03LB INFINEON10+P-TO251-3Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,4 mOhm; RDS (ein)
IPS04N03LA INFINEON10+P-TO251-3Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,4 mOhm; RDS (ein)
IPS03N03LB INFINEON10+P-TO251-3Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,4 mOhm; RDS (ein)
IPS03N03LA INFINEON10+P-TO251-3Næ²éåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK SL (TO-251 SL); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,4 mOhm; RDS (ein)
IPP80N03S4L INFINEON10+PG-TO220-3Næ²éåºæåºç®¡ OptiMOSâ¢2 Leistungstransistor
IPP80CN10N INFINEON10+PG-TO220-3Næ²éåºæåºç®¡ OptiMOSâ¢2 Leistungstransistor
IPP50CN10N INFINEON10+PG-TO220-3Næ²éåºæåºç®¡ OptiMOSâ¢2 Leistungstransistor
IPP35CN10N INFINEON10+PG-TO220-3Næ²éåºæåºç®¡ OptiMOSâ¢2 Leistungstransistor
IPP26CNE8N INFINEON10+PG-TO220-3Næ²éåºæåºç®¡ OptiMOSâ¢2 Leistungstransistor
IPP26CN10N INFINEON10+PG-TO220-3Næ²éåºæåºç®¡ OptiMOSâ¢2 Leistungstransistor
IPP16CNE8N INFINEON10+PG-TO220-3Næ²éåºæåºç®¡ MULTI DVI TRANSMITTER MULTIMODE -FIBER
IPP16CN10N INFINEON10+T0-220Næ²éåºæåºç®¡ MULTI DVI TRANSMITTER MULTIMODE -FIBER
IPP14N03LA INFINEON10+T0-220Næ²éåºæåºç®¡ MULTI DVI TRANSMITTER MULTIMODE -FIBER
IPP147N03L INFINEON10+T0-220Næ²éåºæåºç®¡
IPP13N03LB INFINEON10+T0-220Næ²éåºæåºç®¡
IPP12CNE8N INFINEON2010+PG-TO220-3åçæ¶ä1/2管 OptiMOSâ¢2 Leistungstransistor

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