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IPD10N03LA
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IPD10N03LA

  • 所属类别：场效应管
  • 产品名称：功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) (
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：TO252-3
  • 库存状态：有库存
  • 库存量：16000
  • 最低订购量：1
  • 详细资料：点击查找IPD10N03LA的pdf资料
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  • 产品介绍

IPD10N03LA    功率晶体管  N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) (@4.5V): 17.4 mOhm; ID (max): 30.0 A;

与IPD10N03LA相关的IC还有：


型号厂商批号封装说明
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IPD12CNE8N INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max) (
IPD12CN10N INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max)
SB3100G SEP10+DIP-4桥式整流器
IPD09N03LB INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) (@
IPD090N03LG INFINEON2010+TO-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@
SB3100 VISHAY10+DO-201AB桥式整流器整流二极管
IPD06N03LB INFINEON2010+TO-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) (@
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IPD06N03LB INFINEON2010+TO-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) (@
IPD06N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
IPD060N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
IPD05N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
IPD05N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
IPD04N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
IPD04N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
IPD040N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
IPD03N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
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IPBH6N03LA INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
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IPB16CNE8N INFINEON2010+TO263-3-2功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
IPB16CN10N INFINEON2010+TO263-3-2功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)

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