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IPB16CN10N
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IPB16CN10N

  • 所属类别：场效应管
  • 产品名称：功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：TO263-3-2
  • 库存状态：有库存
  • 库存量：1600
  • 最低订购量：1
  • 详细资料：点击查找IPB16CN10N的pdf资料
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  • 产品介绍

IPB16CN10N   功率晶体管   N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 53.0 A;

与IPB16CN10N相关的IC还有：


型号厂商批号封装说明
IPB26CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB26CN10N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
SB156G LTSEP09+DIP-4桥式整流器
IPB16CNE8N INFINEON2010+TO263-3-2功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
SB156 SEP/TSC11+ROHSDIP-4桥式整流器
IPB14N03LA INFINEON2010+TO263-3-2功率晶体管 N-Channel MOSFETs (20V...150V)
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SB154W LTSEP09+DIP-4桥式整流器
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IPB12CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)

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IPB12CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB12CN10N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB11N03LA INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB10N03LB INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB09N03LA INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) (
IPB08CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (
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IPB06N03LA INFINEON2010+TO-263功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
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IPB04CN10N INFINEON10+TO-263N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V

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