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IPB09N03LA
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IPB09N03LA

  • 所属类别：场效应管
  • 产品名称：功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) (
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：8600
  • 最低订购量：1
  • 详细资料：点击查找IPB09N03LA的pdf资料
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  • 产品介绍

IPB09N03LA   功率晶体管    N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) (@4.5V): 15.1 mOhm; ID (max): 50.0 A;


IPB017N08N5ATMA1


IPB024N08N5ATMA1


IPB042N10N3GATMA1


IPB035N08N3GATMA1


IPB049NE7N3GATMA1


IPB015N08N5ATMA1


IPB065N15N3GATMA1


IPB029N06N3GATMA1


IPB073N15N5ATMA1


IPB031N08N5ATMA1


IPB017N06N3GATMA1


IPB020N10N5ATMA1


IPB049N08N5ATMA1


IPB034N06N3G


IPB052N04NG


IPB051NE8NG


IPB080N03LGATMA1


IPB03N03LBG


IPB097N08N3GATMA1


IPB093N04LG


IPB022N04LG


IPB022N04LGATMA1


IPB05N03LA


IPB075N04LG


IPB048N06LG


IPB03N03LAG


IPB050N06NGATMA1


IPB080N03L G


IPB067N08N3GATMA1


IPB081N06L3GATMA1


IPB065N10N3GATMA1


IPB020N04NGATMA1


IPB090N06N3 G


IPB020N04N G


IPB035N08N3 G


IPB027N10N5ATMA1


IPB024N10N5ATMA1


IPB060N15N5ATMA1


IPB083N10N3 G


IPB027N10N3GATMA1


IPB026N06N


IPB031N08N5


IPB029N06N3 G


IPB049NE7N3 G


IPB034N06L3GATMA1


IPB029N06N3GE8187ATMA1


IPB034N03LGATMA1


IPB054N08N3GATMA1


IPB017N06N3 G


IPB072N15N3G


IPB039N10N3G


IPB011N04NG


IPB014N06N


IPB083N10N3G


IPB055N03LGATMA1


IPB009N03LG


IPB016N06L3G


IPB017N06N3G


IPB017N10N5


IPB023N06N3G


IPB035N08N3G


IPB03N03LA


IPB042N03LG


IPB042N10N3G


IPB06N03LA


IPB07N03L


IPB037N06N3 G


20-1B06IPB010RC-P955A40


20-1B06IPB010RC01-P955A45


20-1B06IPB010RC01-P955A45-/3/


20-1B06IPB004RC-P952A40


20-1B06IPB004RC01-P952A45


20-PB06IPB010RC-P955A40Y


20-1B06IPB010RC02-L815A49


20-1B06IPB006RC01-P955A45


20-1B06IPB010RC03-P955A65


20-1B06IPB006RC01-P953A45


IPB038N12N3G


IPB054N08N3G


IPB015N04LG


IPB072N15N3 G


IPB025N10N3G


IPB017N10N5ATMA1


IPB044N15N5


IPB09N03LA


IPB011N04LG


IPB019N08N3


IPB036N12N3-G


IPB020N04N


IPB054N06N3GATMA1


IPB052N04N G


IPB065N03LG


IPB037N06N3GATMA1


K4H561638H-ZI/PB0


K4H561638H-UI/PB0


IPB031NE7N3 G


IPB009N03LGXT


IPB011N04NGXT


IPB054N08N3GX

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IPB12CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB12CN10N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
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IPB08CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (
IPB08CN10N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
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IPB06N03LA INFINEON2010+TO-263功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She

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型号厂商批号封装说明
IPB08CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (
IPB08CN10N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPB075N150N3 INFINEON2010+TO-263功率晶体管
IPB06N03LB INFINEON2010+TO-263功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06N03LA INFINEON2010+TO-263功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB06CN10N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPB05N03LB INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.6 mOhm; RDS (on) (max) (
IPB05CN10N INFINEON2010+PG-TO263-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max)
IPB051NE8N INFINEON2010+PG-TO263-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (
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IPB04N03LA INFINEON2010+TO-263功率晶体管 -Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@
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IPB03N03LA INFINEON10+TO-263N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V)
IPB037N06N3 INFINEON10+TO-263N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.7 mOhm; RDS (on) (max) (@4.5V)
IPB030N08N3 INFINEON10+TO-263N-Channel MOSFETs (20V…250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 80.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (ma
IPB027N10N3 INFINEON10+TO-263-3N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V
IPB025N08N3 INFINEON10+TO-263-3N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS (on) (max) (@4.5V)
IPB021N06N3G INFINEON10+TO-263-3N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V)

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