主页 > 产品中心 > 场效应管
IPD12CN10N
产品图片仅供参考
欢迎索取产品详细资料

IPD12CN10N

  • 所属类别：场效应管
  • 产品名称：功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max)
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：TO252-3
  • 库存状态：有库存
  • 库存量：16000
  • 最低订购量：1
  • 详细资料：点击查找IPD12CN10N的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IPD12CN10N    功率晶体管  N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 67.0 A;

与IPD12CN10N相关的IC还有：


型号厂商批号封装说明
IPD13N03LA INFINEON2010+SOT-252功率晶体管 Flat / Ribbon Cable; Number of Conductors:10; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Conductor Material:C
IPD135N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 13.5 mOhm; RDS (on) (max) (
SB320 VISHAY10+DO201AD桥式整流器整流二极管
SB310G SEP/TSC11+ROHSDIP-4桥式整流器
IPD12CNE8N INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max) (
SB3100G SEP10+DIP-4桥式整流器
IPD10N03LA INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) (
IPD09N03LB INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) (@
IPD090N03LG INFINEON2010+TO-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@
SB3100 VISHAY10+DO-201AB桥式整流器整流二极管

热门搜索


型号厂商批号封装说明
C25-1AX-H13-N-HB-L HAIMOOO24+控制手柄控制手柄
F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATALOGIC22+DIPphotoelectric sensors
M393A8G40BB4-CWE Samsung21+BGASamsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba21+DIPOptocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt24+继电器瞬时继电器
RC16M23D28 SOURIAU-SUNBANK2023+连接器Standard Circular Contacts Crimp Socket Contact 16-20 AWG
CM300DY-24J Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
CM300DY-24Y Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
PT02E10-6S Amphenol Industrial Operations24+连接器CONN RCPT FMALE 6POS SOLDER CUP
KP02A14-15S Amphenol Corporation24+连接器Circular Connector, Receptacle, Size 14, 15 Position, Box, Product Range:Pt Series,
U-MULTILINK-FX NXP24+工具NXP U-MULTILINK飞思卡尔烧录器USB-ML-Universal 调试器PE仿真器
KPT02E8-4P ITT24+连接器Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE24+DIPHSC Family of Aluminium Housed Power Resistors 75W-500W dissipation capability, Gold anodization and two mounting flanges.
27914-30T12 ITT2023+连接器Contact Dimensions - Male F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC)24+工具DMC压线钳 原装进口正品
CMF8342T CMF23+模块T系列三极管放大器模块
RWR78N39R2FR Vishay24+DIPRES 39.2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI22+继电器STPI/REL ETP6 Relays Non-Latching, 6 PDT, 1 A, 72 VDC
MPS100ASC 三菱2024+工具精密位置检测器

INFINEON品牌产品推荐


型号厂商批号封装说明
IPD10N03LA INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) (
IPD09N03LB INFINEON2010+TO252-3功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) (@
IPD090N03LG INFINEON2010+TO-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@
IPD06N03LB INFINEON2010+TO-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) (@
IPD06N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
IPD060N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
IPD05N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
IPD05N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
IPD04N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
IPD04N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
IPD040N03LG INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
IPD03N03LB INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
IPD03N03LA INFINEON2010+SOT-252功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@
IPBH6N03LA INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB80N06S2L11 INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V）
IPB70N10SL16 INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V）
IPB47N10S33 INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V）
IPB26CNE8N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB26CN10N INFINEON2010+TO-263功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB16CNE8N INFINEON2010+TO263-3-2功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号