主页 > 产品中心 > 场效应管
BSC265N10LSF
产品图片仅供参考
欢迎索取产品详细资料

BSC265N10LSF

  • 所属类别：场效应管
  • 产品名称：N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.5 mOhm; RDS (on) (max) (@4.5V): 36
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：TDSON-8
  • 库存状态：有库存
  • 库存量：15600
  • 最低订购量：1
  • 详细资料：点击查找BSC265N10LSF的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

BSC265N10LSF      N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.5 mOhm; RDS (on) (max) (@4.5V): 36.0 mOhm; ID (max): 40.0 A;

与BSC265N10LSF相关的IC还有：


型号厂商批号封装说明
BSO072N03S INFINEON10+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.8 mOhm; RDS (on) (max) (@4.5V): 9.3 mOhm;
BSO064N03SXT INFINEON10+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.4 mOhm; RDS (on) (max) (@4.5V): 8.8 mOhm;
BSO064N03S INFINEON10+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.4 mOhm; RDS (on) (max) (@4.5V): 8.8 mOhm;
BSO052N03SXT INFINEON10+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 6.7 mOhm;
BSO052N03S INFINEON10+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 6.7 mOhm;
BSC205N10LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 20.5 mOhm; RDS (on) (max) (@4.5V): 28
BSC159N10LSF INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): 16
BSC123N10LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): 16
BSC105N10LSF INFINEON10+SUPERSO8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.5 mOhm; RDS (on) (max) (@4.5V): 14
BSC090N03LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@4.5V): 13.3

热门搜索


型号厂商批号封装说明
F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATALOGIC22+DIPphotoelectric sensors
M393A8G40BB4-CWE Samsung21+BGASamsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba21+DIPOptocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt24+继电器瞬时继电器
RC16M23D28 SOURIAU-SUNBANK2023+连接器Standard Circular Contacts Crimp Socket Contact 16-20 AWG
CM300DY-24J Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
CM300DY-24Y Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
PT02E10-6S Amphenol Industrial Operations24+连接器CONN RCPT FMALE 6POS SOLDER CUP
KP02A14-15S Amphenol Corporation24+连接器Circular Connector, Receptacle, Size 14, 15 Position, Box, Product Range:Pt Series,
U-MULTILINK-FX NXP24+工具NXP U-MULTILINK飞思卡尔烧录器USB-ML-Universal 调试器PE仿真器
KPT02E8-4P ITT24+连接器Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE24+DIPHSC Family of Aluminium Housed Power Resistors 75W-500W dissipation capability, Gold anodization and two mounting flanges.
27914-30T12 ITT2023+连接器Contact Dimensions - Male F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC)24+工具DMC压线钳 原装进口正品
CMF8342T CMF23+模块T系列三极管放大器模块
RWR78N39R2FR Vishay24+DIPRES 39.2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI22+继电器STPI/REL ETP6 Relays Non-Latching, 6 PDT, 1 A, 72 VDC
MPS100ASC 三菱2024+工具精密位置检测器
TFPT1206L1001FV Vishay Dale24+1206SENSOR PTC 1KOHM 1% 1206

INFINEON品牌产品推荐


型号厂商批号封装说明
BSC205N10LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 20.5 mOhm; RDS (on) (max) (@4.5V): 28
BSC159N10LSF INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): 16
BSC123N10LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): 16
BSC105N10LSF INFINEON10+SUPERSO8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.5 mOhm; RDS (on) (max) (@4.5V): 14
BSC090N03LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@4.5V): 13.3
BSC080N03LSG INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0
BSC079N03SG INFINEON11+SON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RDS (on) (max) (@4.5V): 11.6
BSC052N03S INFINEON11+TDSON8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 8.2
BSC050N03LS INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS (on) (max) (@4.5V): 7.5
BSC042N03MS INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 5.4
BSC042N03LS INFINEON11+TDSON8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC030N03LSGXT INFINEON11+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 4.7
BSC030N03LSG INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC030N03LS INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC016N03MS INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC016N03LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC014N03MS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1
BSC014N03LS INFINEON09+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1
IKW03N120H2 INFINEON10+TO-247IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°:
IKP20N60T INFINEON10+TO-220低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极管

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号