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BSC159N10LSF
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BSC159N10LSF

  • 所属类别：场效应管
  • 产品名称：N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): 16
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：TDSON-8
  • 库存状态：有库存
  • 库存量：15600
  • 最低订购量：1
  • 详细资料：点击查找BSC159N10LSF的pdf资料
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  • 产品介绍

BSC159N10LSF       N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.9 mOhm; RDS (on) (max) (@4.5V): 21.5 mOhm; ID (max): 63.0 A;

与BSC159N10LSF相关的IC还有：


型号厂商批号封装说明
BSO064N03S INFINEON10+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.4 mOhm; RDS (on) (max) (@4.5V): 8.8 mOhm;
BSO052N03SXT INFINEON10+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 6.7 mOhm;
BSO052N03S INFINEON10+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 6.7 mOhm;
BSC265N10LSF INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.5 mOhm; RDS (on) (max) (@4.5V): 36
BSC205N10LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 20.5 mOhm; RDS (on) (max) (@4.5V): 28
BSC123N10LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): 16
BSC105N10LSF INFINEON10+SUPERSO8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.5 mOhm; RDS (on) (max) (@4.5V): 14
BSC090N03LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@4.5V): 13.3
BSC080N03LSG INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0

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型号厂商批号封装说明
BSC123N10LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): 16
BSC105N10LSF INFINEON10+SUPERSO8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.5 mOhm; RDS (on) (max) (@4.5V): 14
BSC090N03LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@4.5V): 13.3
BSC080N03LSG INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0
BSC079N03SG INFINEON11+SON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RDS (on) (max) (@4.5V): 11.6
BSC052N03S INFINEON11+TDSON8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 8.2
BSC050N03LS INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS (on) (max) (@4.5V): 7.5
BSC042N03MS INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 5.4
BSC042N03LS INFINEON11+TDSON8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC030N03LSGXT INFINEON11+SOP-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 4.7
BSC030N03LSG INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC030N03LS INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC016N03MS INFINEON11+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC016N03LS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC014N03MS INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1
BSC014N03LS INFINEON09+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1
IKW03N120H2 INFINEON10+TO-247IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°:
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