型号 | 厂商 | 批号 | 封装 | 说明 |
BSC079N03SG
| INFINEON | 11+ | SON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RDS (on) (max) (@4.5V): 11.6 |
BSC052N03S
| INFINEON | 11+ | TDSON8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 8.2 |
BSC050N03LS
| INFINEON | 11+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS (on) (max) (@4.5V): 7.5 |
BSC042N03MS
| INFINEON | 11+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 5.4 |
BSC042N03LS
| INFINEON | 11+ | TDSON8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5 |
BSC030N03LSGXT
| INFINEON | 11+ | SOP-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 4.7 |
BSC030N03LSG
| INFINEON | 11+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
BSC030N03LS
| INFINEON | 11+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
BSC016N03MS
| INFINEON | 11+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
BSC016N03LS
| INFINEON | 10+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
BSC014N03MS
| INFINEON | 10+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1 |
BSC014N03LS
| INFINEON | 09+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1 |
IKW03N120H2
| INFINEON | 10+ | TO-247 | IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: |
IKP20N60T
| INFINEON | 10+ | TO-220 | 低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
IKP15N60T
| INFINEON | 10+ | TO-220 | 低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
IKP10N60T
| INFINEON | 10+ | TO-220 | 低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
IKP06N60T
| INFINEON | 10+ | TO-220 | 低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
IKP04N60T
| INFINEON | 10+ | TO-220 | 低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
IKP03N120H2
| INFINEON | 10+ | TO-220 | IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°: |
IKP01N120H2
| INFINEON | 10+ | TO-220 | IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°: |