型号 | 厂商 | 批号 | 封装 | 说明 |
IRFL014PBF
| IR | 11+ | SOT-223 | 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) |
IRFL014
| IR | 11+ | SOT-223 | 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) |
IRFL110TRPBF
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFL110TR
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFL110PBF
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFL110
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFP044PBF
| IR | 11+ | TO-247 | 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP044N with Lead Free Packaging |
IRFP044
| IR | 11+ | TO-247 | 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP044N with Lead Free Packaging |
IRFP048RPBF
| IR | 11+ | TO-247 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048R
| IR | 11+ | TO-247 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048PBF
| IR | 11+ | TO-247 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048
| IR | 11+ | TO-247 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP054PBF
| IR | 11+ | TO-247 | 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging |
IRFP054
| IR | 11+ | TO-247 | 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging |
IRFP064PBF
| IR | 11+ | TO-247 | Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
IRFP064
| IR | 11+ | TO-247 | Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
IRFP140PBF
| IR | 11+ | TO-247 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为100V,导通电阻为0.052Ω,漏电流为31A)) |
IRFP140
| IR | 11+ | TO-247 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为100V,导通电阻为0.052Ω,漏电流为31A)) |
IRFP150PBF
| IR | 11+ | TO-247 | 40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管) |
IRFP150
| IR | 11+ | TO-247 | 40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管) |