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IRFP150
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IRFP150

  • 所属类别:场效应管
  • 产品名称:40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管)
  • 厂商:IR
  • 生产批号:11+
  • 封装:TO-247
  • 库存状态:有库存
  • 库存量:9000
  • 最低订购量:1
  • 详细资料:点击查找IRFP150的pdf资料
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  • 产品介绍

IRFP150  40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管)

IRFP150相关的IC还有:


型号厂商批号封装说明
IRFP064PBF IR11+TO-247Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
IRFP064 IR11+TO-247Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
IRFP140PBF IR11+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为100V,导通电阻为0.052Ω,漏电流为31A))
IRFP140 IR11+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为100V,导通电阻为0.052Ω,漏电流为31A))
IRFP150PBF IR11+TO-24740A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管)
IRFP240PBF IR10+TO-247HEXFET功率MOS场效应管
IRFP240 IR10+TO-247HEXFET功率MOS场效应管
IRFP2410 IR10+TO-247100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N沟道 HEXFET功率MOS场效应管)
IRFP244PBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.28Ω,漏电流为16A))
IRFP244 IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.28Ω,漏电流为16A))

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型号厂商批号封装说明
IRFP240PBF IR10+TO-247HEXFET功率MOS场效应管
IRFP240 IR10+TO-247HEXFET功率MOS场效应管
IRFP2410 IR10+TO-247100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N沟道 HEXFET功率MOS场效应管)
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IRFP244 IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.28Ω,漏电流为16A))
IRFP250PBF IR09+TO-24733A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)
IRFP250 IR09+TO-24733A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)
IRFP251 IR09+TO-247TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.14Ω,漏电流为25A))
IRFP254NPBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.14Ω,漏电流为25A))
IRFP254N IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.14Ω,漏电流为25A))
IRFP254 IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.14Ω,漏电流为25A))
IRFP260PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP260 IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP264PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
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IRFP264N IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP9140PBF IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
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