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IRFP9140PBF
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IRFP9140PBF

  • 所属类别：场效应管
  • 产品名称：19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-247
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFP9140PBF的pdf资料
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  • 产品介绍

IRFP9140PBF   19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)

与IRFP9140PBF相关的IC还有：


型号厂商批号封装说明
IRFP9140PBF IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)

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型号厂商批号封装说明
IRFP9140 IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
IRFR010TRR IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
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IRFR010TR IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010 IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR014TRRPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRR IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRLPBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRL IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TR IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014PBF IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014 IR10+TO-252N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
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