型号 | 厂商 | 批号 | 封装 | 说明 |
IRFR014TRPBF
| IR | 10+ | TO-252 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
IRFR014TRLPBF
| IR | 10+ | TO-252 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
IRFR014TRL
| IR | 10+ | TO-252 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
IRFR014TR
| IR | 10+ | TO-252 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
IRFR014PBF
| IR | 10+ | TO-252 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
IRFR014
| IR | 10+ | TO-252 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为60V,导通电阻为0.14Ω,漏电流为8.2A)) |
IRFR020TRL
| IR | 10+ | SOT252 | MOSFET N-CH 50V 15A DPAK |
IRFR020TR
| IR | 10+ | SOT252 | MOSFET N-CH 50V 15A DPAK |
IRFR020
| IR | 10+ | SOT252 | MOSFET N-CH 50V 15A DPAK |
IRFR024TRR
| IR | 10+ | SOT252 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
IRFR024TRPBF
| IR | 10+ | SOT252 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
IRFR024TRLPBF
| IR | 10+ | SOT252 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
IRFR024TRL
| IR | 10+ | SOT252 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
IRFR024TR
| IR | 10+ | SOT252 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
IRFR024PBF
| IR | 10+ | SOT252 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
IRFR024
| IR | 10+ | SOT252 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
IRFR110TRPBF
| IR | 10+ | SOT252 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
IRFR110TRLPBF
| IR | 10+ | SOT252 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
IRFR110TRL
| IR | 10+ | SOT252 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
IRFR110TR
| IR | 10+ | SOT252 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |