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IRFR010TRRMOSFET N-CH 50V 8.2A DPAK

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IRFP264PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(æ大æ1/4æºå»ç©¿çμå250V,å ̄1/4éçμé»0.075ΩçNæ²éå¢å1/4ºåæ ååçMOSFET)
IRFP264NPBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(æ大æ1/4æºå»ç©¿çμå250V,å ̄1/4éçμé»0.075ΩçNæ²éå¢å1/4ºåæ ååçMOSFET)
IRFP264N IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(æ大æ1/4æºå»ç©¿çμå250V,å ̄1/4éçμé»0.075ΩçNæ²éå¢å1/4ºåæ ååçMOSFET)
IRFP9140PBF IR10+TO-24719A, 100V, 0.200 Ohm, P-Kanal Leistungs-MOSFETs (19A, 100V, 0.200 Ω, Pæ²éåçMOSåºæåºç®¡)
IRFP9140 IR10+TO-24719A, 100V, 0.200 Ohm, P-Kanal Leistungs-MOSFETs (19A, 100V, 0.200 Ω, Pæ²éåçMOSåºæåºç®¡)
IRFR010TRL IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010TR IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010 IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR014TRRPBF IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR014TRR IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)

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PT02E10-6S Amphenol Industrial Operations24+è¿æ¥å ̈CONN RCPT FMALE 6POS LÖTKELCH
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HSC1008R2J TE24+DIPHSC-Familie von Leistungswiderständen mit Aluminiumgehäuse 75 W bis 500 W, Verlustfähigkeit, Goldeloxierung und zwei Montageflanschen.
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IRFR010TRL IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010TR IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR010 IR10+TO-252MOSFET N-CH 50V 8.2A DPAK
IRFR014TRRPBF IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR014TRR IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR014TRPBF IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR014TRLPBF IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR014TRL IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR014TR IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR014PBF IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR014 IR10+TO-252N-Kanal Power MOSFET(Næ²éå¢å1/4ºååçMOSåºæåºç®¡ï1/4æ1/4æºçμåä ̧º60Vï1/4å ̄1/4éçμé»ä ̧º0.14Ωï1/4æ1/4çμæμä ̧º8.2Aï1/4)
IRFR020TRL IR10+SOT252MOSFET N-CH 50V 15A DPAK
IRFR020TR IR10+SOT252MOSFET N-CH 50V 15A DPAK
IRFR020 IR10+SOT252MOSFET N-CH 50V 15A DPAK
IRFR024TRR IR10+SOT252Leistungs-MOSFET (Vdss = 55 V, Rds (ein) = 0,075 Ohm, Id = 17 Aî)
IRFR024TRPBF IR10+SOT252Leistungs-MOSFET (Vdss = 55 V, Rds (ein) = 0,075 Ohm, Id = 17 Aî)
IRFR024TRLPBF IR10+SOT252Leistungs-MOSFET (Vdss = 55 V, Rds (ein) = 0,075 Ohm, Id = 17 Aî)
IRFR024TRL IR10+SOT252Leistungs-MOSFET (Vdss = 55 V, Rds (ein) = 0,075 Ohm, Id = 17 Aî)
IRFR024TR IR10+SOT252Leistungs-MOSFET (Vdss = 55 V, Rds (ein) = 0,075 Ohm, Id = 17 Aî)
IRFR024PBF IR10+SOT252Leistungs-MOSFET (Vdss = 55 V, Rds (ein) = 0,075 Ohm, Id = 17 Aî)

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