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IRFP150PBF
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IRFP150PBF

  • 所属类别：场效应管
  • 产品名称：40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管)
  • 厂商：IR
  • 生产批号：11+
  • 封装：TO-247
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFP150PBF的pdf资料
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  • 产品介绍

IRFP150PBF  40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管)

与IRFP150PBF相关的IC还有：


型号厂商批号封装说明
IRFP054 IR11+TO-24755V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging
IRFP064PBF IR11+TO-247Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
IRFP064 IR11+TO-247Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
IRFP140PBF IR11+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为100V，导通电阻为0.052Ω，漏电流为31A）)
IRFP140 IR11+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为100V，导通电阻为0.052Ω，漏电流为31A）)
IRFP150 IR11+TO-24740A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管)
IRFP240PBF IR10+TO-247HEXFET功率MOS场效应管
IRFP240 IR10+TO-247HEXFET功率MOS场效应管
IRFP2410 IR10+TO-247100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N沟道 HEXFET功率MOS场效应管)
IRFP244PBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流为16A）)

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型号厂商批号封装说明
IRFP150 IR11+TO-24740A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管)
IRFP240PBF IR10+TO-247HEXFET功率MOS场效应管
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IRFP2410 IR10+TO-247100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N沟道 HEXFET功率MOS场效应管)
IRFP244PBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流为16A）)
IRFP244 IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流为16A）)
IRFP250PBF IR09+TO-24733A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)
IRFP250 IR09+TO-24733A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)
IRFP251 IR09+TO-247TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254NPBF IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254N IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254 IR09+TO-247N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP260PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP260 IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP264PBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264NPBF IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264N IR10+TO-247N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP9140PBF IR10+TO-24719A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
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