型号 | 厂商 | 批号 | 封装 | 说明 |
IRFP048RPBF
| IR | 11+ | TO-247 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048R
| IR | 11+ | TO-247 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048PBF
| IR | 11+ | TO-247 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048
| IR | 11+ | TO-247 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP054PBF
| IR | 11+ | TO-247 | 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging |
IRFP054
| IR | 11+ | TO-247 | 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging |
IRFP064PBF
| IR | 11+ | TO-247 | Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
IRFP064
| IR | 11+ | TO-247 | Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
IRFP140PBF
| IR | 11+ | TO-247 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为100V,导通电阻为0.052Ω,漏电流为31A)) |
IRFP140
| IR | 11+ | TO-247 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为100V,导通电阻为0.052Ω,漏电流为31A)) |
IRFP150PBF
| IR | 11+ | TO-247 | 40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管) |
IRFP150
| IR | 11+ | TO-247 | 40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N沟道增强型功率MOS场效应管) |
IRFP240PBF
| IR | 10+ | TO-247 | HEXFET功率MOS场效应管 |
IRFP240
| IR | 10+ | TO-247 | HEXFET功率MOS场效应管 |
IRFP2410
| IR | 10+ | TO-247 | 100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N沟道 HEXFET功率MOS场效应管) |
IRFP244PBF
| IR | 09+ | TO-247 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.28Ω,漏电流为16A)) |
IRFP244
| IR | 09+ | TO-247 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.28Ω,漏电流为16A)) |
IRFP250PBF
| IR | 09+ | TO-247 | 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管) |
IRFP250
| IR | 09+ | TO-247 | 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管) |
IRFP251
| IR | 09+ | TO-247 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247 |