ä ̧»é¡μ > 产åä ̧å¿ > åºæåºç®¡
IRF9Z34
产åå3/4çä» ä3/4åè
欢è¿ç'¢å产åè ̄¦ç»èμæ

IRF9Z34

  • æå±ç±»å«ï1/4åºæåºç®¡
  • 产åå称ï1/4P-Kanal HEXFET Power MOSFET (Pæ²é HEXFET åçMOSåºæåºç®¡)
  • ååï1/4IR
  • ç产æ¹å·ï1/410+
  • å°è£ ï1/4TO-220
  • åºåç¶æï1/4æåºå
  • åºåéï1/48000
  • æä1/2袮 è'éï1/41
  • è ̄¦ç»èμæï1/4点击查找IRF9Z34çš„pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产åä»ç»

IRF9Z34 P-Kanal HEXFET Power MOSFET (Pæ²é HEXFET åçMOSåºæåºç®¡) Leistungs-MOSFET (Vdss = -60 V, Rds (ein) = 0,14 Ohm, Id = -18 A)

ä ̧IRF9Z34ç ̧å ³çICè¿æï1/4


åå·ååæ¹å·å°è£è ̄'æ
IRF9Z34SPBF IR10+TO-220P-Kanal HEXFET Power MOSFET (Pæ²é HEXFET åçMOSåºæåºç®¡)
IRF9Z34S IR10+TO-220P-Kanal HEXFET Power MOSFET (Pæ²é HEXFET åçMOSåºæåºç®¡)
TL594 TI09+10+16PDIP, 16SO, 16SOIC, 16TSSOPèå®1/2è°å¶ (PWM) æ§å¶çμè· ̄
IRF9Z34PBF IR10+TO-220P-Kanal HEXFET Power MOSFET (Pæ²é HEXFET åçMOSåºæåºç®¡)
IRF9Z34L IR10+TO-262-3P-Kanal HEXFET Power MOSFET (Pæ²é HEXFET åçMOSåºæåºç®¡)
IRFI1010G IR10+TO-220ABLeistungs-MOSFET (Vdss = 55 V, Rds (ein) = 0,012 Ohm, Id = 49 A)
IRFI510G IR10+TO-220FMOSFET N-CH 100V 4.5A TO220FP
IRFI520GPBF IR10+TO-220FMOSFET N-CH 100V 7.2A TO220FP
TL494 TI11+16PDIP, 16SO, 16SOIC, 16SSOP, 16TSSOPèå²å®1/2度è°å¶ (Pwm) æ§å¶çμè· ̄
IRFI520G IR10+TO-220FMOSFET N-CH 100V 7.2A TO220FP

çé ̈æç'¢


åå·ååæ¹å·å°è£è ̄'æ
JL06-28-SONSTIGES JAE Elektronik24+è¿æ¥å ̈27P
LRC-LRF2512LF-01-R005-F TT23+2512Strommesswiderstände - SMD 2 Watt .005 Ohm 1%
ABCIRH06T2214SCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈ABCIRHç³»åè¿æ¥å ̈ç»ä»¶ å ̈æ°åè£ è¿å£ ç°è'§
ABCIRH00T2214PCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈onnector Reverse Bajonett Kupplung Rund RCP 14S-5 ST Kastenhalterung - Bulk
ABB1240KLKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
ABB1240KPKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
RDE7U3A472J4K1H03B Murata Manufacturing Co Ltd24+DIPKondensator: Keramik, 4,7nF, 1kV, U2J, ±5%, THT, 5mm
C195S/24EV-U2 æ²å°ç¹å®24+DIPè1/2 ̈éè¡ä ̧ä ̧ç ̈æ¥è§¦å ̈C195S/24EV-U2 ç°è'§ç¹ä»·åºå2000åª
ABCIRHSE06T16S8SCNF80M32V0 AB Steckverbinder24+è¿æ¥å ̈Zirkulärer MIL Spec Steckverbinder ER 5C 5#16S SKT STECKER
RDE7U3A150J2K1H03B Murata Manufacturing Co Ltd24+çμ容Kondensator: Keramik, 15pF, 1kV, U2J, ±5%, THT, 5mm
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)
Nr. C-1106437 TE Connectivity24+è¿æ¥å ̈Steckverbinder Zubehör Haube Aluminiumdruckguss loses Stück
KH208-8 Vitrohm24+DIPWiderstand, 100 Milliohm, ï¿1/2 10%, 5 W, axial bedrahtet, drahtgewickelt, Stromversorgung (Alt: KHS500KB-AX-R1AA)
GAP26MDS5T0000 Amphenol Positronic23+DIP©ç å1/2¢ MIL è§æ 1/4è¿æ¥å ̈
EE046-T11 å3/4·å1/2E+E24+æ ̈¡åå·åæ£æμ仪
A309560C7W Amphenol Energy Technologies24+è¿æ¥å ̈309 Stecker,3P+N+E / 5W - 60A - Stecker - 277/480V keway 7h,IP67
HBL430B7W Hubbell Premise Verkabelung24+è¿æ¥å ̈PS, IEC, EINGANG, 3P4W, 30A 3P 480V,4X/69K
621N-18F-10-6S Amphenol Corporation24+è¿æ¥å ̈Rundsteckverbinder Steckverbinder Stecker Größe 10
LV100-4000/SP6 è±å§24+ä1/4 æå ̈çμæμä1/4 æå ̈å3/4·å1/2ååä ̧æè'§æºä1/4å¿ä3/4åºä ̧

IRåç产åæ ̈è


åå·ååæ¹å·å°è£è ̄'æ
IRFI1010G IR10+TO-220ABLeistungs-MOSFET (Vdss = 55 V, Rds (ein) = 0,012 Ohm, Id = 49 A)
IRFI510G IR10+TO-220FMOSFET N-CH 100V 4.5A TO220FP
IRFI520GPBF IR10+TO-220FMOSFET N-CH 100V 7.2A TO220FP
IRFI520G IR10+TO-220FMOSFET N-CH 100V 7.2A TO220FP
IRFI530G IR10+TO-220FN-Channel HEXFET Power MOSFET (Næ²é HEXFET åçMOSåºæåºç®¡)
IRFI530 IR10+TO-220FN-Channel HEXFET Power MOSFET (Næ²é HEXFET åçMOSåºæåºç®¡)
IRFI540GPBF IR09+TO-220FLeistungs-MOSFET (Vdss = 100 V, Rds (Ein) = 0,052 Ohm, Id = 20 A)
IRFI540G IR09+TO-220FLeistungs-MOSFET (Vdss = 100 V, Rds (Ein) = 0,052 Ohm, Id = 20 A)
IRFI540 IR09+TO-220FLeistungs-MOSFET (Vdss = 100 V, Rds (Ein) = 0,052 Ohm, Id = 20 A)
IRFI614GPBF IR09+TO-220FLeistungs-MOSFET (Vdss = 250 V, Rds (ein) = 2,0 Ohm, Id = 2,1 A)
IRFI614G IR09+TO-220FLeistungs-MOSFET (Vdss = 250 V, Rds (ein) = 2,0 Ohm, Id = 2,1 A)
IRFI620GPBF IR09+TO-220FLeistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,80 Ohm, Id = 4,1 A)
IRFI620G IR09+TO-220FLeistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,80 Ohm, Id = 4,1 A)
IRFI624GPBF IR10+PBFTO-220Leistungs-MOSFET (Vdss = 250 V, Rds (ein) = 1,1 Ohm, Id = 3,4 A)
IRFI624G IR10+PBFTO-220Leistungs-MOSFET (Vdss = 250 V, Rds (ein) = 1,1 Ohm, Id = 3,4 A)
IRFI630GPBF IR10+PBFTO-220FLeistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,40 Ohm, Id = 5,9 A)
IRFI630G IR10+PBFTO-220FLeistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,40 Ohm, Id = 5,9 A)
IRFI630 IR10+PBFTO-220FLeistungs-MOSFET (Vdss = 200 V, Rds (ein) = 0,40 Ohm, Id = 5,9 A)
IRFI634GPBF IR10+PBFTO-220F250V Næ²éMOSFET
IRFI634 IR10+PBFTO-220F250V Næ²éMOSFET

åç±»æ£ç'¢

Copyright chip100.com © 2010-2011 MCCT粤ICPå¤14056028å·