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IGP50N60T
| INFINEON | 07+PBF | TO-220 | IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 100,0 A; IC(max) @ |
IGP30N60T
| INFINEON | 07+PBF | TO-220 | IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 60,0 A; IC(max) @ 1 |
IGP15N60T
| INFINEON | 07+PBF | TO-220 | IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 30,0 A; IC(max) @ 1 |
IGP10N60T
| INFINEON | 07+PBF | TO-220 | IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 20,0 A; IC(max) @ 1 |
IGP06N60T
| INFINEON | 10+ | TO-220 | Low Loss DuoPack : IGBT in TrenchStop- und Fieldstop-Technologie |
IGP03N120H2
| INFINEON | 10+ | TO-220 | IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max) |
IGP01N120H2
| INFINEON | 10+ | TO-220 | IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max) |
IGD616IT1
| INFINEON | 10+ | æ ̈¡å | 驱å ̈æ ̈¡å |
IGD615AI
| INFINEON | 10+ | æ ̈¡å | 驱å ̈æ ̈¡å |
IGD515EI
| INFINEON | 10+ | æ ̈¡å | 驱å ̈æ ̈¡å |
IGD06N60T
| INFINEON | 10+ | TO-252 | å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO252-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: DPAK (TO-252); VCE (max): 600,0 V; IC(max) @ 25°: 12 |
IGD01N120H2
| INFINEON | 10+ | TO-252 | å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO252-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: DPAK (TO-252); VCE (max): 1.200,0 V; IC(max) @ 25° |
IGB30N60T
| INFINEON | 10+ | TO-263 | å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: D2PAK (TO-263); VCE (max): 600,0 V; IC(max) @ 25°: 6 |
IGB15N60T
| INFINEON | 10+ | TO-263 | å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: D2PAK (TO-263); VCE (max): 600,0 V; IC(max) @ 25°: 3 |
IGB03N120H2
| INFINEON | 10+ | TO-263 | å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: D2PAK (TO-263); VCE (max): 1.200,0 V; IC(max) @ 25 |
IGB01N120H2
| INFINEON | 10+ | TO-263 | å¿«éå1/4å ³å¿«æ¢å¤äºæ管GBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: D2PAK (TO-263); VCE (max): 1.200,0 V; IC(max) @ 25° |
IGA03N120H2
| INFINEON | 10+ | TO-220F | å¿«éå1/4å ³å¿«æ¢å¤äºæ管 IGBT Discretes; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: -; Ich |
IDW75E60
| INFINEON | 10+ | TO-247 | å¿«éå1/4å ³å¿«æ¢å¤äºæ管 600V Silizium-Leistungsdioden; Gehäuse: PG-TO247-3; WENN (typ): 75,0 A; ZF (max): 120,0 A; IF,SM (max): 220,0 A; VF (typ): 1,65 V; IR (max): 40,0 |
IDW100E60
| INFINEON | 1012+ | TO-247 | å¿«éå1/4å ³å¿«æ¢å¤äºæ管 600V Silizium-Leistungsdioden; Gehäuse: PG-TO247-3; WENN (typ): 100,0 A; WENN (max): 150,0 A; IF,SM (max): 400,0 A; VF (typ): 1,65 V; IR (max): 40. |
IDP45E60
| INFINEON | 10+ | PG-TO220-2 | 600V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 45,0 A; WENN (max): 71,0 A; IF,SM (max): 162,0 A; VF (typ): 1,5 V; IR (max): 50,0 μA; |