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IGP10N60T
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IGP10N60T

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  • 产åå称ï1/4IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 20,0 A; IC(max) @ 1
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IGP10N60T IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP™ 2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 20,0 A; IC(max) @ 100°: 10,0 A

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IGW08T120 INFINEON07+PBFTO-247-3IGBT diskret; Gehäuse: PG-TO247-3; Schaltfrequenz: TRENCHSTOPâ¢2 2-20kHz; Gehäuse: TO-247; VCE (max): 1.200,0 V; IC(max) @ 25°: 16,0 A; IC(max)
IGW03N120H2 INFINEON07+PBFTO-247-3IGBT diskret; Gehäuse: PG-TO247-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-247; VCE (max): 1.200,0 V; IC(max) @ 25°: 9,6 A; IC(max)
IGP50N60T INFINEON07+PBFTO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 100,0 A; IC(max) @
IGP30N60T INFINEON07+PBFTO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 60,0 A; IC(max) @ 1
IGP15N60T INFINEON07+PBFTO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 30,0 A; IC(max) @ 1
IGP06N60T INFINEON10+TO-220Low Loss DuoPack : IGBT in TrenchStop- und Fieldstop-Technologie
IGP03N120H2 INFINEON10+TO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max)
IGP01N120H2 INFINEON10+TO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max)
IGD616IT1 INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD615AI INFINEON10+æ ̈¡å驱å ̈æ ̈¡å

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Nr. Z52929 ITT24+è¿æ¥å ̈Standard-Rundsteckverbinder CIR 3C 3#12 FR PIN RECP
JAE. JIT. OCHSE-16 JAE Elektronik2023+è¿æ¥å ̈16#ééå ̈
RCS20M-12RD28 SOURIAU-SONNENBANK2023+è¿æ¥å ̈Zirkuläre MIL-Spezifikationskontakte CONTACT
PW620-41M5kΩ129 FSG24+çμä1/2å ̈PW620-41 M 5k Ω/129°Çμä1/2Å ̈
CU-U-201-GE Mors Smitt24+继çμå ̈继çμå ̈
FRCIR06-32-8P-F80-T108 ITT Interconnect-Lösungen24+è¿æ¥å ̈CIR 30C 24#16 6#12 STECKER
Artikel-Nr.: SPCI-001-500 欧米è24+DIPè£ ̧ççμå¶çº¿ï1/4JN ï1/4线è1/2'ï1/4 | 欧米è éç»ç1/4 T/C 线ï1/4ç»ç'å3/4ï1/4J å ï1/4-ï1/4ï1/4500' çμç1/4ï1/450 AWGï1/40 °C è³ 315 °Cï1/432 °F è³ 600 °Fï1/4ï1/4SPCI ç³»åï1/4线è1/2"
ET-JL06-18 JAE Elektronik2023+å·¥å ·æééå·¥å ·
JL06-28-SONSTIGES JAE Elektronik24+è¿æ¥å ̈27P
LRC-LRF2512LF-01-R005-F TT23+2512Strommesswiderstände - SMD 2 Watt .005 Ohm 1%
ABCIRH06T2214SCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈ABCIRHç³»åè¿æ¥å ̈ç»ä»¶ å ̈æ°åè£ è¿å£ ç°è'§
ABCIRH00T2214PCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈onnector Reverse Bajonett Kupplung Rund RCP 14S-5 ST Kastenhalterung - Bulk
ABB1240KLKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
ABB1240KPKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
RDE7U3A472J4K1H03B Murata Manufacturing Co Ltd24+DIPKondensator: Keramik, 4,7nF, 1kV, U2J, ±5%, THT, 5mm
C195S/24EV-U2 æ²å°ç¹å®24+DIPè1/2 ̈éè¡ä ̧ä ̧ç ̈æ¥è§¦å ̈C195S/24EV-U2 ç°è'§ç¹ä»·åºå2000åª
ABCIRHSE06T16S8SCNF80M32V0 AB Steckverbinder24+è¿æ¥å ̈Zirkulärer MIL Spec Steckverbinder ER 5C 5#16S SKT STECKER
RDE7U3A150J2K1H03B Murata Manufacturing Co Ltd24+çμ容Kondensator: Keramik, 15pF, 1kV, U2J, ±5%, THT, 5mm
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)

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IGP06N60T INFINEON10+TO-220Low Loss DuoPack : IGBT in TrenchStop- und Fieldstop-Technologie
IGP03N120H2 INFINEON10+TO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max)
IGP01N120H2 INFINEON10+TO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max)
IGD616IT1 INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD615AI INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD515EI INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD06N60T INFINEON10+TO-252å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO252-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: DPAK (TO-252); VCE (max): 600,0 V; IC(max) @ 25°: 12
IGD01N120H2 INFINEON10+TO-252å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO252-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: DPAK (TO-252); VCE (max): 1.200,0 V; IC(max) @ 25°
IGB30N60T INFINEON10+TO-263å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: D2PAK (TO-263); VCE (max): 600,0 V; IC(max) @ 25°: 6
IGB15N60T INFINEON10+TO-263å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: D2PAK (TO-263); VCE (max): 600,0 V; IC(max) @ 25°: 3
IGB03N120H2 INFINEON10+TO-263å¿«éå1/4å ³å¿«æ¢å¤äºæ管IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: D2PAK (TO-263); VCE (max): 1.200,0 V; IC(max) @ 25
IGB01N120H2 INFINEON10+TO-263å¿«éå1/4å ³å¿«æ¢å¤äºæ管GBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: D2PAK (TO-263); VCE (max): 1.200,0 V; IC(max) @ 25°
IGA03N120H2 INFINEON10+TO-220Få¿«éå1/4å ³å¿«æ¢å¤äºæ管 IGBT Discretes; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: -; Ich
IDW75E60 INFINEON10+TO-247å¿«éå1/4å ³å¿«æ¢å¤äºæ管 600V Silizium-Leistungsdioden; Gehäuse: PG-TO247-3; WENN (typ): 75,0 A; ZF (max): 120,0 A; IF,SM (max): 220,0 A; VF (typ): 1,65 V; IR (max): 40,0
IDW100E60 INFINEON1012+TO-247å¿«éå1/4å ³å¿«æ¢å¤äºæ管 600V Silizium-Leistungsdioden; Gehäuse: PG-TO247-3; WENN (typ): 100,0 A; WENN (max): 150,0 A; IF,SM (max): 400,0 A; VF (typ): 1,65 V; IR (max): 40.
IDP45E60 INFINEON10+PG-TO220-2600V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 45,0 A; WENN (max): 71,0 A; IF,SM (max): 162,0 A; VF (typ): 1,5 V; IR (max): 50,0 μA;
IDP45E120 INFINEON10+PG-TO220-2å¿«éå1/4å ³å¿«æ¢å¤äºæ管
IDP23E60 INFINEON10+PG-TO220-2å¿«éå1/4å ³å¿«æ¢å¤äºæ管
IDP18E120 INFINEON10+PG-TO220-21200Våçäºæ管 1200V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 18,0 A; WENN (max): 31,0 A; IF,SM (max): 78,0 A; VF (typ): 1,65 V; IR (max): 100,0
IDP15E60 INFINEON10+PG-TO220-2600Våçäºæ管 600V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 9,0 A; WENN (max): 19,3 A; IF,SM (max): 40,0 A; VF (typ): 1,5 V; IR (max): 50,0 μA;

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