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IGP03N120H2
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IGP03N120H2

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  • 产ååç§°ï1/4IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max)
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IGP03N120H2  IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 9,6 A; IC(max) @ 100°: 3,9 A

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IGP50N60T INFINEON07+PBFTO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 100,0 A; IC(max) @
IGP30N60T INFINEON07+PBFTO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 60,0 A; IC(max) @ 1
IGP15N60T INFINEON07+PBFTO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 30,0 A; IC(max) @ 1
IGP10N60T INFINEON07+PBFTO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: TO-220; VCE (max): 600,0 V; IC(max) @ 25°: 20,0 A; IC(max) @ 1
IGP06N60T INFINEON10+TO-220Low Loss DuoPack : IGBT in TrenchStop- und Fieldstop-Technologie
IGP01N120H2 INFINEON10+TO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max)
IGD616IT1 INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD615AI INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD515EI INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD06N60T INFINEON10+TO-252å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡IGBT Discretes; Gehäuse: PG-TO252-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: DPAK (TO-252); VCE (max): 600,0 V; IC(max) @ 25°: 12

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FRCIR06F-18S-8S-F80-T12-T108 ITT Interconnect-Lösungen24+è¿æ¥å ̈STECKER STECKER 8P SILV SLDR BECHER
TAJT105K020RNJ AVX24+SMDKappe Tant Solid 1uF 20V T GEHÄUSE 10% (3.5 x 2.8 x 1.2mm) Inward L SMD 3528-12 9 Ohm 125°C
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1816098-1 TE2023+DIPç»§çμå ̈RELAIS GEN ZWECK DPDT 8A 12V
207444-9 TE2023+è¿æ¥å ̈CONN HEADER VERT 18POS 5MM
Nr. Z52929 ITT24+è¿æ¥å ̈Standard-Rundsteckverbinder CIR 3C 3#12 FR PIN RECP
JAE. JIT. OCHSE-16 JAE Elektronik2023+è¿æ¥å ̈16#ééå ̈
RCS20M-12RD28 SOURIAU-SONNENBANK2023+è¿æ¥å ̈Zirkuläre MIL-Spezifikationskontakte CONTACT
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FRCIR06-32-8P-F80-T108 ITT Interconnect-Lösungen24+è¿æ¥å ̈CIR 30C 24#16 6#12 STECKER
Artikel-Nr.: SPCI-001-500 欧米è24+DIPè£ ̧ççμå¶çº¿ï1/4JN ï1/4线è1/2'ï1/4 | 欧米è éç»ç1/4 T/C 线ï1/4ç»ç'å3/4ï1/4J å ï1/4-ï1/4ï1/4500' çμç1/4ï1/450 AWGï1/40 °C è³ 315 °Cï1/432 °F è³ 600 °Fï1/4ï1/4SPCI ç³»åï1/4线è1/2"
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IGP01N120H2 INFINEON10+TO-220IGBT diskret; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: 3,2 A; IC(max)
IGD616IT1 INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD615AI INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD515EI INFINEON10+æ ̈¡å驱å ̈æ ̈¡å
IGD06N60T INFINEON10+TO-252å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡IGBT Discretes; Gehäuse: PG-TO252-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: DPAK (TO-252); VCE (max): 600,0 V; IC(max) @ 25°: 12
IGD01N120H2 INFINEON10+TO-252å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡IGBT Discretes; Gehäuse: PG-TO252-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: DPAK (TO-252); VCE (max): 1.200,0 V; IC(max) @ 25°
IGB30N60T INFINEON10+TO-263å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: D2PAK (TO-263); VCE (max): 600,0 V; IC(max) @ 25°: 6
IGB15N60T INFINEON10+TO-263å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: TRENCHSTOP⢠2-20kHz; Gehäuse: D2PAK (TO-263); VCE (max): 600,0 V; IC(max) @ 25°: 3
IGB03N120H2 INFINEON10+TO-263å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡IGBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: D2PAK (TO-263); VCE (max): 1.200,0 V; IC(max) @ 25
IGB01N120H2 INFINEON10+TO-263å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡GBT Discretes; Gehäuse: PG-TO263-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: D2PAK (TO-263); VCE (max): 1.200,0 V; IC(max) @ 25°
IGA03N120H2 INFINEON10+TO-220Få¿«éå1/4å ³å¿«æ¢å¤äºæç®¡ IGBT Discretes; Gehäuse: PG-TO220-3; Schaltfrequenz: HighSpeed2 30-100 kHz; Gehäuse: TO-220; VCE (max): 1.200,0 V; IC(max) @ 25°: -; Ich
IDW75E60 INFINEON10+TO-247å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡ 600V Silizium-Leistungsdioden; Gehäuse: PG-TO247-3; WENN (typ): 75,0 A; ZF (max): 120,0 A; IF,SM (max): 220,0 A; VF (typ): 1,65 V; IR (max): 40,0
IDW100E60 INFINEON1012+TO-247å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡ 600V Silizium-Leistungsdioden; Gehäuse: PG-TO247-3; WENN (typ): 100,0 A; WENN (max): 150,0 A; IF,SM (max): 400,0 A; VF (typ): 1,65 V; IR (max): 40.
IDP45E60 INFINEON10+PG-TO220-2600V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 45,0 A; WENN (max): 71,0 A; IF,SM (max): 162,0 A; VF (typ): 1,5 V; IR (max): 50,0 μA;
IDP45E120 INFINEON10+PG-TO220-2å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡
IDP23E60 INFINEON10+PG-TO220-2å¿«éå1/4å ³å¿«æ¢å¤äºæç®¡
IDP18E120 INFINEON10+PG-TO220-21200Våçäºæç®¡ 1200V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 18,0 A; WENN (max): 31,0 A; IF,SM (max): 78,0 A; VF (typ): 1,65 V; IR (max): 100,0
IDP15E60 INFINEON10+PG-TO220-2600Våçäºæç®¡ 600V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 9,0 A; WENN (max): 19,3 A; IF,SM (max): 40,0 A; VF (typ): 1,5 V; IR (max): 50,0 μA;
IDP12E120 INFINEON10+PG-TO220-21200Våçäºæç®¡ 600V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 9,0 A; WENN (max): 19,3 A; IF,SM (max): 40,0 A; VF (typ): 1,5 V; IR (max): 50,0 μA;
IDP09E60 INFINEON10+PG-TO220-2600Våçäºæç®¡ 600V Silizium-Leistungsdioden; Gehäuse: PG-TO220-2; WENN (typ): 9,0 A; WENN (max): 19,3 A; IF,SM (max): 40,0 A; VF (typ): 1,5 V; IR (max): 50,0 μA;

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