型号 | 厂商 | 批号 | 封装 | 说明 |
BSC047N08NS3G
| INFINEON | 10+ | TDSON-8 | N通道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS |
BSC080N03MSG
| INFINEON | 10+ | TDSON-8 | N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2 |
BSC057N03LSG
| INFINEON | 2011+ | TDSON-8 | 30.0 V 73A N通道,场效应管 |
BSC057N03MSG
| INFINEON | 2011+ | TDSON-8 | 30.0 V 73A N通道,场效应管 |
BSC059N03SG
| INFINEON | 2011+ | TDSON-8 | N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS ( |
BSC031N06NS3G
| INFINEON | 2011+ | TDSON-8 | N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS ( |
BSC100N10NSFG
| INFINEON | 2011+ | TDSON-8 | N通道,100.0 V 90.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD |
BSC082N10LSG
| INFINEON | 2011+ | TDSON-8 | N通道,100.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD |
BSC020N03LSG
| INFINEON | 2011+ | TDSON-8 | N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS |
BSC020N03MSG
| INFINEON | 2011+ | TDSON-8 | N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS |
BSC022N03SG
| INFINEON | 2011+ | TDSON-8 | N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS |
BSC025N03LSG
| INFINEON | 2011+ | TDSON-8 | N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS |
BSC025N03MSG
| INFINEON | 2011+ | TDSON-8 | N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS |
BSC027N03SG
| INFINEON | 2011+ | SuperSO8 | N通道, 场效应管 |
BSC079N10NSG
| INFINEON | 2011+ | TDSON-8 | N通道,100V 100 A 场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RDS (on) |
BSC060N10NS3G
| INFINEON | 2011+ | TDSON-8 | N通道,100V 90 A 场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm; RDS (on) |
BSC030N03MSG
| INFINEON | 10+ | TDSON-8 | 30.0 V 100.0 A N通道 功率场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; |
SUP90N06
| INFINEON | 10+ | TO-220 | N通道 功率场效应管N-Channel 60-V (D-S) 175 C MOSFET |
STB60NF60LT4
| INFINEON | 10+ | TO-263 | N通道 功率场效应管 |
SPU30N03S2L-10
| INFINEON | 10+ | TO251-3 | 30.0 V 30.0 A N通道 功率场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK (TO-251); VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.2 mO |