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BSC031N06NS3G Nééï1/460.0 V 100.0 Aåºæåºç®¡N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 3,1 mOhm; RDS (ein) (max.) (@4,5 V): -; Zulässigkeit (max.): 100,0 A;

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BSC047N08NS3G INFINEON10+TDSON-8Néé 80.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 80,0 V; RDS (ein) (max.) (@10V): 4,7 mOhm; RDS
BSC080N03MSG INFINEON10+TDSON-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 8,0 mOhm; RDS (ein) (max.) (@4,5 V): 10,2
BSC057N03LSG INFINEON2011+TDSON-830.0 V 73A Nééï1/4åºæåºç®¡
BSC057N03MSG INFINEON2011+TDSON-830.0 V 73A Nééï1/4åºæåºç®¡
BSC059N03SG INFINEON2011+TDSON-8Nééï1/460.0 V 100.0 Aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 3,1 mOhm; RDS (
BSC100N10NSFG INFINEON2011+TDSON-8Nééï1/4100.0 V 90.0 Aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 10,0 mOhm; RD
BSC082N10LSG INFINEON2011+TDSON-8Nééï1/4100.0 V 100.0 Aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,2 mOhm; RD
BSC020N03LSG INFINEON2011+TDSON-8Nééï1/430.0 V 100.0 Aåºæåºç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 2,5 mOhm; RDS
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BSC020N03MSG INFINEON2011+TDSON-8Nééï1/430.0 V 100.0 Aåºæåºç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 2,5 mOhm; RDS

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BSC100N10NSFG INFINEON2011+TDSON-8Nééï1/4100.0 V 90.0 Aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 10,0 mOhm; RD
BSC082N10LSG INFINEON2011+TDSON-8Nééï1/4100.0 V 100.0 Aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 8,2 mOhm; RD
BSC020N03LSG INFINEON2011+TDSON-8Nééï1/430.0 V 100.0 Aåºæåºç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 2,5 mOhm; RDS
BSC020N03MSG INFINEON2011+TDSON-8Nééï1/430.0 V 100.0 Aåºæåºç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 2,5 mOhm; RDS
BSC022N03SG INFINEON2011+TDSON-8Nééï1/430.0 V 100.0 Aåºæåºç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 2,5 mOhm; RDS
BSC025N03LSG INFINEON2011+TDSON-8Nééï1/430.0 V 100.0 Aåºæåºç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 2,5 mOhm; RDS
BSC025N03MSG INFINEON2011+TDSON-8Nééï1/430.0 V 100.0 Aåºæåºç®¡ N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 2,5 mOhm; RDS
BSC027N03SG INFINEON2011+SuperSO8Nééï1/4 åºæåºç®¡
BSC079N10NSG INFINEON2011+TDSON-8Nééï1/4100V 100 A åºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 7,9 mOhm; RDS (ein)
BSC060N10NS3G INFINEON2011+TDSON-8Nééï1/4100V 90 A åºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 6,0 mOhm; RDS (ein)
BSC030N03MSG INFINEON10+TDSON-830,0 V 100,0 A N-Kanal-MOSFETs® (20 V bis 250 V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 3,0 mOhm;
SUP90N06 INFINEON10+TO-220Néé åçåºæåºç®¡N-Kanal 60-V (D-S) 175 C MOSFET
STB60NF60LT4 INFINEON10+TO-263Néé åçåºæåºç®¡
SPU30N03S2L-10 INFINEON10+TO251-330,0 V 30,0 A Néé åçåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK (TO-251); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 8,2 mO
SPU30N03S2-08 INFINEON10+TO251-330,0 V 30,0 A Néé åçåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK (TO-251); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 8,2 mO
SPU11N10 INFINEON10+TO251-3Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPP80N10L INFINEON10+TO220-3Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPP35N10 INFINEON10+TO220-3Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPP21N10 INFINEON10+TO220-3Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPP10N10 INFINEON10+TO-220Néé åçåºæåºç®¡ CAP 1000PF 100V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22

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