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BSC030N03MSG 30.0 V 100.0 A Néé åçåºæåºç®¡N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 3,0 mOhm; RDS (ein) (max.) (@4,5 V): 3,8 mOhm; Zulässigkeit (max.): 100,0 A;

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SBT606G	SEP/TSC	11+ROH	DIP-4	æ¡¥å1/4æ'æμå ̈
SBT606	SEP/TSC	11+ROH	DIP-4	æ¡¥å1/4æ'æμå ̈
SBT605G	SEP/TSC	11+ROH	DIP-4	æ¡¥å1/4æ'æμå ̈
SBT605	SEP/TSC	11+ROH	DIP-4	æ¡¥å1/4æ'æμå ̈
SBT604G	SEP/TSC	11+ROH	DIP-4	æ¡¥å1/4æ'æμå ̈
SBT604	SEP/TSC	11+ROH	DIP-4	æ¡¥å1/4æ'æμå ̈
SBT603G	SEP/TSC	11+ROH	DIP-4	æ¡¥å1/4æ'æμå ̈
SUP90N06	INFINEON	10+	TO-220	Néé åçåºæåºç®¡N-Kanal 60-V (D-S) 175 C MOSFET
SBT603	SEP/TSC	11+ROH	DIP-4	æ¡¥å1/4æ'æμå ̈
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CIRG06RGG18-1S-F80-T12	ITT Interconnect-Lösungen	24+	è¿æ¥å ̈	CIR 5C 5#16 SKT STECKER
CIRH03T1610PCNF80M32V0	TE/AMP	24+	è¿æ¥å ̈	CONN RCPT HSNG STECKER 3POS PNL MNT
ABCIRH03T1610PCNF80M32V0	AB Steckverbinder	24+	è¿æ¥å ̈	CONN RCPT HSNG STECKER 3POS PNL MNT
FRCIR06F-18S-8S-F80-T12-T108	ITT Interconnect-Lösungen	24+	è¿æ¥å ̈	STECKER STECKER 8P SILV SLDR BECHER
TAJT105K020RNJ	AVX	24+	SMD	Kappe Tant Solid 1uF 20V T GEHÄUSE 10% (3.5 x 2.8 x 1.2mm) Inward L SMD 3528-12 9 Ohm 125°C
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Nr. Z52929	ITT	24+	è¿æ¥å ̈	Standard-Rundsteckverbinder CIR 3C 3#12 FR PIN RECP
JAE. JIT. OCHSE-16	JAE Elektronik	2023+	è¿æ¥å ̈	16#ééå ̈
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SUP90N06	INFINEON	10+	TO-220	Néé åçåºæåºç®¡N-Kanal 60-V (D-S) 175 C MOSFET
STB60NF60LT4	INFINEON	10+	TO-263	Néé åçåºæåºç®¡
SPU30N03S2L-10	INFINEON	10+	TO251-3	30,0 V 30,0 A Néé åçåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK (TO-251); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 8,2 mO
SPU30N03S2-08	INFINEON	10+	TO251-3	30,0 V 30,0 A Néé åçåºæåºç®¡ N-Kanal-MOSFETs (20 V â bis 250 V); Gehäuse: PG-TO251-3; Gehäuse: IPAK (TO-251); VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 8,2 mO
SPU11N10	INFINEON	10+	TO251-3	Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPP80N10L	INFINEON	10+	TO220-3	Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPP35N10	INFINEON	10+	TO220-3	Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPP21N10	INFINEON	10+	TO220-3	Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPP10N10	INFINEON	10+	TO-220	Néé åçåºæåºç®¡ CAP 1000PF 100V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
SPI80N10L	INFINEON	10+	TO262-3	Néé åçåºæåºç®¡
SPI35N10	INFINEON	10+	TO262-3	Néé åçåºæåºç®¡ Multi-Color LED; LED-Farbe: Gelb / Grün; Lichtstärke: 16mcd; Betrachtungswinkel:120 ; Durchlassstrom: 30 mA; Durchlassspannung: 2,1 V; Operati
SPI21N10	INFINEON	10+	TO262-3	Néé åçåºæåºç®¡ CAP 1000PF 100V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
SPI10N10	INFINEON	10+	TO262-3	Néé åçåºæåºç®¡ CAP 1000PF 100V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
SPD35N10	INFINEON	10+	TO-252	Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPD11N10	INFINEON	10+	TO-252	Néé åçåºæåºç®¡ SIPMOS Power-Transistor
SPD100N03S2L-04	INFINEON	10+	TO-252	Néé åçåºæåºç®¡ Power Semiconductors , N-Channel MOSFETs (20V... 300V)
SPB80N10L	INFINEON	10+	D2PAKï1/4TO-263)	åçåºæåºç®¡ SIPMOS Leistungstransistor
SPB80N06S2L11	INFINEON	10+	P-TO263	OptiMOS Leistungstransistor( MOS ååçæ¶ä1/2ç®¡)
SPB35N10	INFINEON	10+	P-TO263-3	25mA 2,2V åçåºæåºç®¡
SPB21N10	INFINEON	10+	P-TO263-3	åçåºæåºç®¡

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