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BSC080N03MSG
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BSC080N03MSG

  • 所属类别:场效应管
  • 产品名称:N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2
  • 厂商:INFINEON
  • 生产批号:10+
  • 封装:TDSON-8
  • 库存状态:有库存
  • 库存量:15000
  • 最低订购量:1
  • 详细资料:点击查找BSC080N03MSG的pdf资料
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  • 产品介绍

BSC080N03MSG   N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2 mOhm; ID (max): 53.0 A

BSC080N03MSG相关的IC还有:


型号厂商批号封装说明
BSC057N08NS3G INFINEON2011+TDSON-8N通道,80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LSG INFINEON2011+TDSON-8N通道,30.0 V 44.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC100N03MSG INFINEON10+TDSON-8N通道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC090N03LSG INFINEON10+TDSON-8N通道 30.0 V 47.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON10+TDSON-8N通道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC057N03LSG INFINEON2011+TDSON-830.0 V 73A N通道,场效应管
BSC057N03MSG INFINEON2011+TDSON-830.0 V 73A N通道,场效应管
BSC059N03SG INFINEON2011+TDSON-8N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC031N06NS3G INFINEON2011+TDSON-8N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC100N10NSFG INFINEON2011+TDSON-8N通道,100.0 V 90.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD

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型号厂商批号封装说明
BSC057N03LSG INFINEON2011+TDSON-830.0 V 73A N通道,场效应管
BSC057N03MSG INFINEON2011+TDSON-830.0 V 73A N通道,场效应管
BSC059N03SG INFINEON2011+TDSON-8N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC031N06NS3G INFINEON2011+TDSON-8N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC100N10NSFG INFINEON2011+TDSON-8N通道,100.0 V 90.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD
BSC082N10LSG INFINEON2011+TDSON-8N通道,100.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD
BSC020N03LSG INFINEON2011+TDSON-8N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC020N03MSG INFINEON2011+TDSON-8N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC022N03SG INFINEON2011+TDSON-8N通道,30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
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