型号 | 厂商 | 批号 | 封装 | 说明 |
IRFIZ24GPBF
| IR | 11+ | TO-220 | Power MOSFET(Vdss=60V, Rds(on)=0.071ohm, Id=14A) |
IRFIZ24G
| IR | 11+ | TO-220 | Power MOSFET(Vdss=60V, Rds(on)=0.071ohm, Id=14A) |
IRFIZ24
| IR | 11+ | TO-220 | Power MOSFET(Vdss=60V, Rds(on)=0.071ohm, Id=14A) |
IRFIZ34GPBF
| IR | 11+ | TO-220 | Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A) |
IRFIZ34G
| IR | 11+ | TO-220 | Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A) |
IRFIZ34
| IR | 11+ | TO-220 | Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A) |
IRFIZ44GPBF
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=55V, Rds(on)=0.024ohm, Id=31A) |
IRFIZ44G
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=55V, Rds(on)=0.024ohm, Id=31A) |
IRFIZ44
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=55V, Rds(on)=0.024ohm, Id=31A) |
IRFIZ48GPBF
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) |
IRFIZ48G
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) |
IRFL014TRPBF
| IR | 11+ | SOT-223 | 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) |
IRFL014TR
| IR | 11+ | SOT-223 | 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) |
IRFL014PBF
| IR | 11+ | SOT-223 | 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) |
IRFL014
| IR | 11+ | SOT-223 | 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) |
IRFL110TRPBF
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFL110TR
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFL110PBF
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFL110
| IR | 11+ | SOT-223 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFP044PBF
| IR | 11+ | TO-247 | 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP044N with Lead Free Packaging |