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IPB25N06S3-25
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IPB25N06S3-25

  • 所属类别：电源管理芯片
  • 产品名称：OptiMOS㈢-T Power-Transistor
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：4500
  • 最低订购量：1
  • 详细资料：点击查找IPB25N06S3-25的pdf资料
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IPB25N06S3-25   OptiMOS㈢-T Power-Transistor

与IPB25N06S3-25相关的IC还有：


型号厂商批号封装说明
IPB45N06S4-09 INFINEON10+D PAKOptiMOS㈢-T Power-Transistor
IPB45N06S3L-13 INFINEON10+TO263-3-2OptiMOS㈢-T Power-Transistor
IPB45N06S3-16 INFINEON10+TO263-3-2OptiMOS㈢-T Power-Transistor
IPB45N04S4L-08 INFINEON10+TO263-3-2OptiMOS㈢-T Power-Transistor
IPB25N06S3L-22 INFINEON10+TO263-3-2OptiMOS㈢-T Power-Transistor
IPB22N03S4L-15 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N06S4-H1 INFINEON10+PG-TO263-7-Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-H0 INFINEON10+PG-TO263-7-Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-00 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S3-02 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R

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型号厂商批号封装说明
IPB22N03S4L-15 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N06S4-H1 INFINEON10+PG-TO263-7-Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-H0 INFINEON10+PG-TO263-7-Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-00 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S3-02 INFINEON10+TO-263Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N03S4L-H0 INFINEON10+PG-TO263-7-OptiMOS㈢ - T Power-Transistor
IPB180N03S4L-01 INFINEON10+PG-TO263-7-OptiMOS㈢ - T Power-Transistor
IPB160N04S4-H1 INFINEON10+PG-TO263-7-OptiMOS㈢ - T Power-Transistor
IPB160N04S3-H2 INFINEON10+PG-TO263-7OptiMOS㈢ - T Power-Transistor
IPB160N04S2L-03 INFINEON10+PG-TO263-7OptiMOS㈢ - T Power-Transistor
IPB160N04S2-03 INFINEON10+TO-263-6OptiMOS㈢ - T Power-Transistor
IPB120N06S4-H1 INFINEON10+TO263-3Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB120N06S4-03 INFINEON10+TO263-3Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB120N06S4-02 INFINEON10+TO263-3Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB100N10S3-05 INFINEON10+PG-TO263-3OptiMOS㈢ Power-Transistor
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